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Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection
Li, Mingze1,2; Wang, Zhenhua1,2; Gao, Xuan P. A.3; Zhang, Zhidong1,2
Corresponding AuthorWang, Zhenhua(zhwang@imr.ac.cn) ; Gao, Xuan P. A.(xuan.gao@case.edu)
2020-05-07
Source PublicationJOURNAL OF PHYSICAL CHEMISTRY C
ISSN1932-7447
Volume124Issue:18Pages:10135-10142
AbstractAs an exotic state of quantum matter, topological insulators like Bi2Se3 have potential applications in low power electronic and optoelectronic devices. Bi2Se3 nanoflakes or films with (001) orientation, laying horizontally on substrates, have been studied extensively in the past few years. Here we report the growth and photodetection response of Bi2Se3 nanoplates oriented vertically on the p-type Si substrate. This unconventional structure and geometry provide a higher effective absorption length for light absorption and potentially more efficient photocarrier transport via the topologically protected surface states or the basal plane of Bi2Se3 nanoplates. By compensating Bi2Se3 native defects with Cu doping, we achieve an increase of 42 times in the photocurrent when the Cu concentration is 3.87 at. %. Our work paves a way for exploring the excellent optoelectronic properties of topological insulator films with an unconventional orientation.
Funding OrganizationNational Natural Science Foundation of China (NSFC) ; National Key R&D Program of China ; Foundation of National Laboratory for Materials Science ; Liaoning Revitalization Talents Program ; United Foundation of Liaoning Province and National Laboratory for Materials Science
DOI10.1021/acs.jpcc.0c01978
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China (NSFC)[51971220] ; National Key R&D Program of China[2017YFA0206302] ; Foundation of National Laboratory for Materials Science[L2019R31] ; Liaoning Revitalization Talents Program[XLYC1807122] ; United Foundation of Liaoning Province and National Laboratory for Materials Science[2019JH3]
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000535175400051
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/138985
Collection中国科学院金属研究所
Corresponding AuthorWang, Zhenhua; Gao, Xuan P. A.
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China
3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
Recommended Citation
GB/T 7714
Li, Mingze,Wang, Zhenhua,Gao, Xuan P. A.,et al. Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2020,124(18):10135-10142.
APA Li, Mingze,Wang, Zhenhua,Gao, Xuan P. A.,&Zhang, Zhidong.(2020).Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection.JOURNAL OF PHYSICAL CHEMISTRY C,124(18),10135-10142.
MLA Li, Mingze,et al."Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection".JOURNAL OF PHYSICAL CHEMISTRY C 124.18(2020):10135-10142.
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