Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection

doi:10.1021/acs.jpcc.0c01978

IMR OpenIR

	Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection
	Li, Mingze 1,2; Wang, Zhenhua 1,2; Gao, Xuan P. A.3; Zhang, Zhidong 1,2
通讯作者	Wang, Zhenhua(zhwang@imr.ac.cn) ; Gao, Xuan P. A.(xuan.gao@case.edu)
	2020-05-07
发表期刊	JOURNAL OF PHYSICAL CHEMISTRY C
ISSN	1932-7447
卷号	124 期号:18 页码:10135-10142
摘要	As an exotic state of quantum matter, topological insulators like Bi2Se3 have potential applications in low power electronic and optoelectronic devices. Bi2Se3 nanoflakes or films with (001) orientation, laying horizontally on substrates, have been studied extensively in the past few years. Here we report the growth and photodetection response of Bi2Se3 nanoplates oriented vertically on the p-type Si substrate. This unconventional structure and geometry provide a higher effective absorption length for light absorption and potentially more efficient photocarrier transport via the topologically protected surface states or the basal plane of Bi2Se3 nanoplates. By compensating Bi2Se3 native defects with Cu doping, we achieve an increase of 42 times in the photocurrent when the Cu concentration is 3.87 at. %. Our work paves a way for exploring the excellent optoelectronic properties of topological insulator films with an unconventional orientation.
资助者	National Natural Science Foundation of China (NSFC) ; National Key R&D Program of China ; Foundation of National Laboratory for Materials Science ; Liaoning Revitalization Talents Program ; United Foundation of Liaoning Province and National Laboratory for Materials Science
DOI	10.1021/acs.jpcc.0c01978
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China (NSFC)[51971220] ; National Key R&D Program of China[2017YFA0206302] ; Foundation of National Laboratory for Materials Science[L2019R31] ; Liaoning Revitalization Talents Program[XLYC1807122] ; United Foundation of Liaoning Province and National Laboratory for Materials Science[2019JH3]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000535175400051
出版者	AMER CHEMICAL SOC
引用统计	被引频次：17[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/138985
专题	中国科学院金属研究所
通讯作者	Wang, Zhenhua; Gao, Xuan P. A.
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
推荐引用方式 GB/T 7714	Li, Mingze,Wang, Zhenhua,Gao, Xuan P. A.,et al. Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2020,124(18):10135-10142.
APA	Li, Mingze,Wang, Zhenhua,Gao, Xuan P. A.,&Zhang, Zhidong.(2020).Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection.JOURNAL OF PHYSICAL CHEMISTRY C,124(18),10135-10142.
MLA	Li, Mingze,et al."Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection".JOURNAL OF PHYSICAL CHEMISTRY C 124.18(2020):10135-10142.