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Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides
Zhang, Ye1; Guo, Huaihong1; Sun, Wei1; Sun, Hongzhi1; Ali, Sajjad2,3; Zhang, Zhidong2; Saito, Riichiro4; Yang, Teng2
Corresponding AuthorGuo, Huaihong(hhguo@escience.cn) ; Yang, Teng(yangteng@imr.ac.cn)
2020-06-16
Source PublicationJOURNAL OF RAMAN SPECTROSCOPY
ISSN0377-0486
Volume51Issue:8Pages:9
AbstractBased on ab initio density functional calculation and nonresonant Raman theory, we calculate strain dependent Raman spectra of six kinds of transition-metal dichalcogenides (TMDCs). The biaxial strain dependence of Raman intensity and direct band gap in TMDC monolayers is systematically studied from which we show a scaling law of the Raman intensity and band gap. Out-of-planeA(1g)mode has vanishing intensity under a certain strain. Such a strain-induced behavior is found to be universal in the TMDC, and Raman intensity for the six TMDCs can be scaled as a function of Gruneissen parameter gamma and Raman wavenumbers in the frame of Morse-type function. The scaling behavior of Raman intensity and direct band gap in TMDCs indicates of some material-independent picture which can be used for new understanding of properties and design of new-type functional devices for electronic and optoelectronic application based on strain engineering.
Keywordintensity dip Raman intensity scaling strain effect TMDC
Funding OrganizationJSPS KAKENHI ; NSFC ; College Students' innovation and entrepreneurship projects
DOI10.1002/jrs.5908
Indexed BySCI
Language英语
Funding ProjectJSPS KAKENHI[JP18H01810] ; NSFC[51702146] ; NSFC[U1537204] ; College Students' innovation and entrepreneurship projects[201710148000072]
WOS Research AreaSpectroscopy
WOS SubjectSpectroscopy
WOS IDWOS:000540447100001
PublisherWILEY
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/139286
Collection中国科学院金属研究所
Corresponding AuthorGuo, Huaihong; Yang, Teng
Affiliation1.Liaoning Shihua Univ, Coll Sci, Fushun 113001, Peoples R China
2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen, Peoples R China
4.Tohoku Univ, Dept Phys, Sendai, Miyagi, Japan
Recommended Citation
GB/T 7714
Zhang, Ye,Guo, Huaihong,Sun, Wei,et al. Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides[J]. JOURNAL OF RAMAN SPECTROSCOPY,2020,51(8):9.
APA Zhang, Ye.,Guo, Huaihong.,Sun, Wei.,Sun, Hongzhi.,Ali, Sajjad.,...&Yang, Teng.(2020).Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides.JOURNAL OF RAMAN SPECTROSCOPY,51(8),9.
MLA Zhang, Ye,et al."Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides".JOURNAL OF RAMAN SPECTROSCOPY 51.8(2020):9.
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