Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides

doi:10.1002/jrs.5908

IMR OpenIR

	Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides
	Zhang, Ye 1; Guo, Huaihong 1; Sun, Wei 1; Sun, Hongzhi 1; Ali, Sajjad 2,3; Zhang, Zhidong 2; Saito, Riichiro 4; Yang, Teng 2
通讯作者	Guo, Huaihong(hhguo@escience.cn) ; Yang, Teng(yangteng@imr.ac.cn)
	2020-06-16
发表期刊	JOURNAL OF RAMAN SPECTROSCOPY
ISSN	0377-0486
卷号	51 期号:8 页码:9
摘要	Based on ab initio density functional calculation and nonresonant Raman theory, we calculate strain dependent Raman spectra of six kinds of transition-metal dichalcogenides (TMDCs). The biaxial strain dependence of Raman intensity and direct band gap in TMDC monolayers is systematically studied from which we show a scaling law of the Raman intensity and band gap. Out-of-planeA(1g)mode has vanishing intensity under a certain strain. Such a strain-induced behavior is found to be universal in the TMDC, and Raman intensity for the six TMDCs can be scaled as a function of Gruneissen parameter gamma and Raman wavenumbers in the frame of Morse-type function. The scaling behavior of Raman intensity and direct band gap in TMDCs indicates of some material-independent picture which can be used for new understanding of properties and design of new-type functional devices for electronic and optoelectronic application based on strain engineering.
关键词	intensity dip Raman intensity scaling strain effect TMDC
资助者	JSPS KAKENHI ; NSFC ; College Students' innovation and entrepreneurship projects
DOI	10.1002/jrs.5908
收录类别	SCI
语种	英语
资助项目	JSPS KAKENHI[JP18H01810] ; NSFC[51702146] ; NSFC[U1537204] ; College Students' innovation and entrepreneurship projects[201710148000072]
WOS研究方向	Spectroscopy
WOS类目	Spectroscopy
WOS记录号	WOS:000540447100001
出版者	WILEY
引用统计	被引频次：13[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/139286
专题	中国科学院金属研究所
通讯作者	Guo, Huaihong; Yang, Teng
作者单位	1.Liaoning Shihua Univ, Coll Sci, Fushun 113001, Peoples R China 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Southern Univ Sci & Technol, Dept Phys, Shenzhen, Peoples R China 4.Tohoku Univ, Dept Phys, Sendai, Miyagi, Japan
推荐引用方式 GB/T 7714	Zhang, Ye,Guo, Huaihong,Sun, Wei,et al. Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides[J]. JOURNAL OF RAMAN SPECTROSCOPY,2020,51(8):9.
APA	Zhang, Ye.,Guo, Huaihong.,Sun, Wei.,Sun, Hongzhi.,Ali, Sajjad.,...&Yang, Teng.(2020).Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides.JOURNAL OF RAMAN SPECTROSCOPY,51(8),9.
MLA	Zhang, Ye,et al."Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides".JOURNAL OF RAMAN SPECTROSCOPY 51.8(2020):9.