| Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides | |
| Zhang, Ye1; Guo, Huaihong1; Sun, Wei1; Sun, Hongzhi1; Ali, Sajjad2,3; Zhang, Zhidong2; Saito, Riichiro4; Yang, Teng2 | |
| Corresponding Author | Guo, Huaihong(hhguo@escience.cn) ; Yang, Teng(yangteng@imr.ac.cn) |
| 2020-06-16 | |
| Source Publication | JOURNAL OF RAMAN SPECTROSCOPY
 |
| ISSN | 0377-0486 |
| Pages | 9 |
| Abstract | Based on ab initio density functional calculation and nonresonant Raman theory, we calculate strain dependent Raman spectra of six kinds of transition-metal dichalcogenides (TMDCs). The biaxial strain dependence of Raman intensity and direct band gap in TMDC monolayers is systematically studied from which we show a scaling law of the Raman intensity and band gap. Out-of-planeA(1g)mode has vanishing intensity under a certain strain. Such a strain-induced behavior is found to be universal in the TMDC, and Raman intensity for the six TMDCs can be scaled as a function of Gruneissen parameter gamma and Raman wavenumbers in the frame of Morse-type function. The scaling behavior of Raman intensity and direct band gap in TMDCs indicates of some material-independent picture which can be used for new understanding of properties and design of new-type functional devices for electronic and optoelectronic application based on strain engineering. |
| Keyword | intensity dip Raman intensity scaling strain effect TMDC |
| Funding Organization | JSPS KAKENHI ; NSFC ; College Students' innovation and entrepreneurship projects |
| DOI | 10.1002/jrs.5908 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | JSPS KAKENHI[JP18H01810] ; NSFC[51702146] ; NSFC[U1537204] ; College Students' innovation and entrepreneurship projects[201710148000072] |
| WOS Research Area | Spectroscopy |
| WOS Subject | Spectroscopy |
| WOS ID | WOS:000540447100001 |
| Publisher | WILEY |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/139289 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Guo, Huaihong; Yang, Teng |
| Affiliation | 1.Liaoning Shihua Univ, Coll Sci, Fushun 113001, Peoples R China 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Southern Univ Sci & Technol, Dept Phys, Shenzhen, Peoples R China 4.Tohoku Univ, Dept Phys, Sendai, Miyagi, Japan |
| Recommended Citation GB/T 7714 | Zhang, Ye,Guo, Huaihong,Sun, Wei,et al. Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides[J]. JOURNAL OF RAMAN SPECTROSCOPY,2020:9. |
| APA | Zhang, Ye.,Guo, Huaihong.,Sun, Wei.,Sun, Hongzhi.,Ali, Sajjad.,...&Yang, Teng.(2020).Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides.JOURNAL OF RAMAN SPECTROSCOPY,9. |
| MLA | Zhang, Ye,et al."Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides".JOURNAL OF RAMAN SPECTROSCOPY (2020):9. |
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