| Molten-Salt-Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS(2)and Effectively Altering the Electronic Structure and Phononic Properties | |
| Li, Wei1,2; Huang, Jianqi5; Han, Bo3,4; Xie, Chunyu1; Huang, Xiaoxiao1,2; Tian, Kesong1,2; Zeng, Yi1,2; Zhao, Zijing1,2; Gao, Peng3,4,6; Zhang, Yanfeng1; Yang, Teng5; Zhang, Zhidong5; Sun, Shengnan1,2; Hou, Yanglong1,2 | |
| Corresponding Author | Hou, Yanglong(hou@pku.edu.cn) |
| 2020-07-01 | |
| Source Publication | ADVANCED SCIENCE
 |
| Pages | 9 |
| Abstract | Substitutional doping of layered transition metal dichalcogenides (TMDs) has been proved to be an effective route to alter their intrinsic properties and achieve tunable bandgap, electrical conductivity and magnetism, thus greatly broadening their applications. However, achieving valid substitutional doping of TMDs remains a great challenge to date. Herein, a distinctive molten-salt-assisted chemical vapor deposition (MACVD) method is developed to match the volatilization of the dopants perfectly with the growth process of monolayer MoS2, realizing the substitutional doping of transition metal Fe, Co, and Mn. This doping strategy effectively alters the electronic structure and phononic properties of the pristine MoS2. In addition, a temperature-dependent Raman spectrum is employed to explore the effect of dopants on the lattice dynamics and first-order temperature coefficient of monolayer MoS2, and this doping effect is illustrated in depth combined with the theoretical calculation. This work provides an intriguing and powerful doping strategy for TMDs through employing molten salt in the CVD system, paving the way for exploring new properties of 2D TMDs and extending their applications into spintronics, catalytic chemistry and photoelectric devices. |
| Keyword | 2D molten-salt-assisted chemical vapor deposition molybdenum disulfide substitutional doping |
| Funding Organization | National Key R&D Program of China ; National Natural Science Foundation of China |
| DOI | 10.1002/advs.202001080 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Key R&D Program of China[2017YFA0206301] ; National Key R&D Program of China[2016YFA0200102] ; National Natural Science Foundation of China[51631001] ; National Natural Science Foundation of China[51590882] ; National Natural Science Foundation of China[51672007] ; National Natural Science Foundation of China[11974023] |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS ID | WOS:000544600400001 |
| Publisher | WILEY |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/139675 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Hou, Yanglong |
| Affiliation | 1.Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China 2.Beijing Innovat Ctr Engn Sci & Adv Technol BIC ES, Beijing Key Lab Magnetoelect Mat & Devices BKL MM, Beijing 100871, Peoples R China 3.Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China 4.Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 6.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China |
| Recommended Citation GB/T 7714 | Li, Wei,Huang, Jianqi,Han, Bo,et al. Molten-Salt-Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS(2)and Effectively Altering the Electronic Structure and Phononic Properties[J]. ADVANCED SCIENCE,2020:9. |
| APA | Li, Wei.,Huang, Jianqi.,Han, Bo.,Xie, Chunyu.,Huang, Xiaoxiao.,...&Hou, Yanglong.(2020).Molten-Salt-Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS(2)and Effectively Altering the Electronic Structure and Phononic Properties.ADVANCED SCIENCE,9. |
| MLA | Li, Wei,et al."Molten-Salt-Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS(2)and Effectively Altering the Electronic Structure and Phononic Properties".ADVANCED SCIENCE (2020):9. |
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