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The importance of H-2 in the controlled growth of semiconducting single-wall carbon nanotubes
Zhang, Feng1,2; Sun, Jia3; Zheng, Yonggang3; Hou, Peng-Xiang1,2; Liu, Chang1,2; Cheng, Min1,2; Li, Xin1,2; Cheng, Hui-Ming1,4; Chen, Zhen3,5
Corresponding AuthorHou, Peng-Xiang(pxhou@imr.ac.cn) ; Liu, Chang(cliu@imr.ac.cn)
2020-10-01
Source PublicationJOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN1005-0302
Volume54Pages:105-111
AbstractH-2 is considered an indispensable component of the atmosphere for the growth of high-quality single-wall carbon nanotubes (SWCNTs) by chemical vapor deposition. However, details of the roles H-2 playing are still unclear due to the complex conditions of SWCNT growth. In this study, we elucidate the functions of H-2 in the selective growth of semiconducting SWCNTs (s-SWCNTs) by using monodispersed uniform Fe nanoparticles as a catalyst. High-quality s-SWCNTs were synthesized by finely tuning the concentration of H-2 and the other growth parameters. Experimental data combined with atomistic simulations indicate that H-2 not only adjusts the concentration of the carbon source, but also serves as a mild etchant that selectively removes small carbon caps grown by a perpendicular mode from the Fe nanoparticles. These results provide useful hints for the controlled growth of SWCNTs with a semiconducting or metallic conductivity, and even a specific chirality. (C) 2020 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
KeywordSingle-wall carbon nanotubes Controlled growth Semiconducting Growth mode H-2
Funding OrganizationMinistry of Science and Technology of China ; National Natural Science Foundation of China
DOI10.1016/j.jmst.2020.02.067
Indexed BySCI
Language英语
Funding ProjectMinistry of Science and Technology of China[2016YFA0200101] ; National Natural Science Foundation of China[51702325] ; National Natural Science Foundation of China[51625203] ; National Natural Science Foundation of China[51532008] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51572264] ; National Natural Science Foundation of China[5171101360]
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000545310500011
PublisherJOURNAL MATER SCI TECHNOL
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/139806
Collection中国科学院金属研究所
Corresponding AuthorHou, Peng-Xiang; Liu, Chang
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Dalian Univ Technol, Fac Vehicle Engn & Mech, State Key Lab Struct Anal Ind Equipment, Dept Engn Mech,Int Res Ctr Computat Mech, Dalian 116024, Peoples R China
4.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China
5.Univ Missouri, Dept Civil & Environm Engn, Columbia, MO 65211 USA
Recommended Citation
GB/T 7714
Zhang, Feng,Sun, Jia,Zheng, Yonggang,et al. The importance of H-2 in the controlled growth of semiconducting single-wall carbon nanotubes[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2020,54:105-111.
APA Zhang, Feng.,Sun, Jia.,Zheng, Yonggang.,Hou, Peng-Xiang.,Liu, Chang.,...&Chen, Zhen.(2020).The importance of H-2 in the controlled growth of semiconducting single-wall carbon nanotubes.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,54,105-111.
MLA Zhang, Feng,et al."The importance of H-2 in the controlled growth of semiconducting single-wall carbon nanotubes".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 54(2020):105-111.
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