| Chemical vapor deposition of layered two-dimensional MoSi2N4 materials | |
| Hong, Yi-Lun1,2; Liu, Zhibo1; Wang, Lei1,2; Zhou, Tianya1,2; Ma, Wei1,2; Xu, Chuan1; Feng, Shun1,3; Chen, Long1; Chen, Mao-Lin1,2; Sun, Dong-Ming1,2; Chen, Xing-Qiu1,2; Cheng, Hui-Ming1,2,4,5; Ren, Wencai1,2 | |
| Corresponding Author | Ren, Wencai(wcren@limr.ac.cn) |
| 2020-08-07 | |
| Source Publication | SCIENCE
 |
| ISSN | 0036-8075 |
| Volume | 369Issue:6504Pages:670-+ |
| Abstract | Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSi2N4. This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap similar to 1.94 electron volts), high strength (similar to 66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals. |
| Funding Organization | National Natural Science Foundation of China ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Key R&D Program of the Ministry of Science and Technology of China ; LiaoNing Revitalization Talents Program ; Program for Guangdong Introducing Innovative and Entrepreneurial Teams ; Development and Reform Commission of Shenzhen Municipality |
| DOI | 10.1126/science.abb7023 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51725103] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51671193] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; National Key R&D Program of the Ministry of Science and Technology of China[2016YFA0200101] ; LiaoNing Revitalization Talents Program[XLYC1808013] ; Program for Guangdong Introducing Innovative and Entrepreneurial Teams ; Development and Reform Commission of Shenzhen Municipality |
| WOS Research Area | Science & Technology - Other Topics |
| WOS Subject | Multidisciplinary Sciences |
| WOS ID | WOS:000559184400041 |
| Publisher | AMER ASSOC ADVANCEMENT SCIENCE |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/140175 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Ren, Wencai |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 4.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 5.Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England |
| Recommended Citation GB/T 7714 | Hong, Yi-Lun,Liu, Zhibo,Wang, Lei,et al. Chemical vapor deposition of layered two-dimensional MoSi2N4 materials[J]. SCIENCE,2020,369(6504):670-+. |
| APA | Hong, Yi-Lun.,Liu, Zhibo.,Wang, Lei.,Zhou, Tianya.,Ma, Wei.,...&Ren, Wencai.(2020).Chemical vapor deposition of layered two-dimensional MoSi2N4 materials.SCIENCE,369(6504),670-+. |
| MLA | Hong, Yi-Lun,et al."Chemical vapor deposition of layered two-dimensional MoSi2N4 materials".SCIENCE 369.6504(2020):670-+. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment