| Flexoelectricity-induced retention failure in ferroelectric films | |
| Zou, M. J.1,2; Tang, Y. L.1; Zhu, Y. L.1; Wang, Y. J.1; Feng, Y. P.1,3; Han, M. J.1,3; Zhang, N. B.1,2; Ma, J. Y.1,2,4; Geng, W. R.1,2; Hu, W. T.1,2; Guo, X. W.1,2; Wu, B.1; Ma, X. L.1,4 | |
| Corresponding Author | Zhu, Y. L.(ylzhu@imr.ac.cn) ; Ma, X. L.(xlma@imr.ac.cn) |
| 2020-09-01 | |
| Source Publication | ACTA MATERIALIA
 |
| ISSN | 1359-6454 |
| Volume | 196Pages:61-68 |
| Abstract | Retention failure is deleterious on ferroelectric domain stability, resulting in data loss in ferroelectric memories. However, the understanding of the origin of retention failure remains a challenge for the lack of a direct experimental evidence. Here, using a combination of piezoelectric force microscopy, atomic-scale scanning transmission electron microscopy and reciprocal space mapping, we report that the polarization retention failure is caused by a strain gradient induced flexoelectric field in tetragonal ferroelectric films. Atomic imaging reveals that the strain gradient is introduced by tensile strains, which is resultant from the vertically distributed Pb-rich anti-phase domains. This strain gradient couples with polarizations and results in flexoelectric fields in the films, leading to the retention failure in the films. Our study directly underlines the atomic mechanisms behind the strain gradient induced macroscopic retention failure behavior and clarifies the effect of local strain state on domain relaxation processes, thus can shed light on further understanding and improving the retention properties of oxide ferroelectrics. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| Keyword | Ferroelectrics Flexoelectricity Retention failure Strain gradient |
| Funding Organization | Key Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China ; Shenyang National Laboratory for Materials Science ; Youth Innovation Promotion Association CAS |
| DOI | 10.1016/j.actamat.2020.06.037 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China[51971223] ; National Natural Science Foundation of China[51671194] ; National Natural Science Foundation of China[51922100] ; Shenyang National Laboratory for Materials Science[L2019R06] ; Shenyang National Laboratory for Materials Science[L2019R08] ; Shenyang National Laboratory for Materials Science[L2019F01] ; Shenyang National Laboratory for Materials Science[L2019F13] ; Youth Innovation Promotion Association CAS[2016177] |
| WOS Research Area | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000557651000007 |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/140247 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhu, Y. L.; Ma, X. L. |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 3.Univ Chinese Acad Sci, Yuquan Rd 19, Beijing 100049, Peoples R China 4.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Gansu, Peoples R China |
| Recommended Citation GB/T 7714 | Zou, M. J.,Tang, Y. L.,Zhu, Y. L.,et al. Flexoelectricity-induced retention failure in ferroelectric films[J]. ACTA MATERIALIA,2020,196:61-68. |
| APA | Zou, M. J..,Tang, Y. L..,Zhu, Y. L..,Wang, Y. J..,Feng, Y. P..,...&Ma, X. L..(2020).Flexoelectricity-induced retention failure in ferroelectric films.ACTA MATERIALIA,196,61-68. |
| MLA | Zou, M. J.,et al."Flexoelectricity-induced retention failure in ferroelectric films".ACTA MATERIALIA 196(2020):61-68. |
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