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Flexoelectricity-induced retention failure in ferroelectric films
Zou, M. J.1,2; Tang, Y. L.1; Zhu, Y. L.1; Wang, Y. J.1; Feng, Y. P.1,3; Han, M. J.1,3; Zhang, N. B.1,2; Ma, J. Y.1,2,4; Geng, W. R.1,2; Hu, W. T.1,2; Guo, X. W.1,2; Wu, B.1; Ma, X. L.1,4
Corresponding AuthorZhu, Y. L.(ylzhu@imr.ac.cn) ; Ma, X. L.(xlma@imr.ac.cn)
2020-09-01
Source PublicationACTA MATERIALIA
ISSN1359-6454
Volume196Pages:61-68
AbstractRetention failure is deleterious on ferroelectric domain stability, resulting in data loss in ferroelectric memories. However, the understanding of the origin of retention failure remains a challenge for the lack of a direct experimental evidence. Here, using a combination of piezoelectric force microscopy, atomic-scale scanning transmission electron microscopy and reciprocal space mapping, we report that the polarization retention failure is caused by a strain gradient induced flexoelectric field in tetragonal ferroelectric films. Atomic imaging reveals that the strain gradient is introduced by tensile strains, which is resultant from the vertically distributed Pb-rich anti-phase domains. This strain gradient couples with polarizations and results in flexoelectric fields in the films, leading to the retention failure in the films. Our study directly underlines the atomic mechanisms behind the strain gradient induced macroscopic retention failure behavior and clarifies the effect of local strain state on domain relaxation processes, thus can shed light on further understanding and improving the retention properties of oxide ferroelectrics. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
KeywordFerroelectrics Flexoelectricity Retention failure Strain gradient
Funding OrganizationKey Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China ; Shenyang National Laboratory for Materials Science ; Youth Innovation Promotion Association CAS
DOI10.1016/j.actamat.2020.06.037
Indexed BySCI
Language英语
Funding ProjectKey Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China[51971223] ; National Natural Science Foundation of China[51671194] ; National Natural Science Foundation of China[51922100] ; Shenyang National Laboratory for Materials Science[L2019R06] ; Shenyang National Laboratory for Materials Science[L2019R08] ; Shenyang National Laboratory for Materials Science[L2019F01] ; Shenyang National Laboratory for Materials Science[L2019F13] ; Youth Innovation Promotion Association CAS[2016177]
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000557651000007
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/140247
Collection中国科学院金属研究所
Corresponding AuthorZhu, Y. L.; Ma, X. L.
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China
3.Univ Chinese Acad Sci, Yuquan Rd 19, Beijing 100049, Peoples R China
4.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Gansu, Peoples R China
Recommended Citation
GB/T 7714
Zou, M. J.,Tang, Y. L.,Zhu, Y. L.,et al. Flexoelectricity-induced retention failure in ferroelectric films[J]. ACTA MATERIALIA,2020,196:61-68.
APA Zou, M. J..,Tang, Y. L..,Zhu, Y. L..,Wang, Y. J..,Feng, Y. P..,...&Ma, X. L..(2020).Flexoelectricity-induced retention failure in ferroelectric films.ACTA MATERIALIA,196,61-68.
MLA Zou, M. J.,et al."Flexoelectricity-induced retention failure in ferroelectric films".ACTA MATERIALIA 196(2020):61-68.
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