Flexoelectricity-induced retention failure in ferroelectric films

doi:10.1016/j.actamat.2020.06.037

IMR OpenIR

	Flexoelectricity-induced retention failure in ferroelectric films
	Zou, M. J.1,2; Tang, Y. L.1; Zhu, Y. L.1; Wang, Y. J.1; Feng, Y. P.1,3; Han, M. J.1,3; Zhang, N. B.1,2; Ma, J. Y.1,2,4; Geng, W. R.1,2; Hu, W. T.1,2; Guo, X. W.1,2; Wu, B.1; Ma, X. L.1,4
通讯作者	Zhu, Y. L.(ylzhu@imr.ac.cn) ; Ma, X. L.(xlma@imr.ac.cn)
	2020-09-01
发表期刊	ACTA MATERIALIA
ISSN	1359-6454
卷号	196 页码:61-68
摘要	Retention failure is deleterious on ferroelectric domain stability, resulting in data loss in ferroelectric memories. However, the understanding of the origin of retention failure remains a challenge for the lack of a direct experimental evidence. Here, using a combination of piezoelectric force microscopy, atomic-scale scanning transmission electron microscopy and reciprocal space mapping, we report that the polarization retention failure is caused by a strain gradient induced flexoelectric field in tetragonal ferroelectric films. Atomic imaging reveals that the strain gradient is introduced by tensile strains, which is resultant from the vertically distributed Pb-rich anti-phase domains. This strain gradient couples with polarizations and results in flexoelectric fields in the films, leading to the retention failure in the films. Our study directly underlines the atomic mechanisms behind the strain gradient induced macroscopic retention failure behavior and clarifies the effect of local strain state on domain relaxation processes, thus can shed light on further understanding and improving the retention properties of oxide ferroelectrics. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
关键词	Ferroelectrics Flexoelectricity Retention failure Strain gradient
资助者	Key Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China ; Shenyang National Laboratory for Materials Science ; Youth Innovation Promotion Association CAS
DOI	10.1016/j.actamat.2020.06.037
收录类别	SCI
语种	英语
资助项目	Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China[51971223] ; National Natural Science Foundation of China[51671194] ; National Natural Science Foundation of China[51922100] ; Shenyang National Laboratory for Materials Science[L2019R06] ; Shenyang National Laboratory for Materials Science[L2019R08] ; Shenyang National Laboratory for Materials Science[L2019F01] ; Shenyang National Laboratory for Materials Science[L2019F13] ; Youth Innovation Promotion Association CAS[2016177]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000557651000007
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/140247
专题	中国科学院金属研究所
通讯作者	Zhu, Y. L.; Ma, X. L.
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 3.Univ Chinese Acad Sci, Yuquan Rd 19, Beijing 100049, Peoples R China 4.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Zou, M. J.,Tang, Y. L.,Zhu, Y. L.,et al. Flexoelectricity-induced retention failure in ferroelectric films[J]. ACTA MATERIALIA,2020,196:61-68.
APA	Zou, M. J..,Tang, Y. L..,Zhu, Y. L..,Wang, Y. J..,Feng, Y. P..,...&Ma, X. L..(2020).Flexoelectricity-induced retention failure in ferroelectric films.ACTA MATERIALIA,196,61-68.
MLA	Zou, M. J.,et al."Flexoelectricity-induced retention failure in ferroelectric films".ACTA MATERIALIA 196(2020):61-68.