IMR OpenIR
Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures
Chen, Shanquan1; Yuan, Shuai1; Hou, Zhipeng2,3,4; Tang, Yunlong5; Zhang, Jinping1; Wang, Tao1; Li, Kang6; Zhao, Weiwei1,6; Liu, Xingjun1; Chen, Lang7; Martin, Lane W.8,9; Chen, Zuhuang1,6
Corresponding AuthorZhao, Weiwei(wzhao@hit.edu.cn) ; Chen, Zuhuang(zuhuang@hit.edu.cn)
2020-08-19
Source PublicationADVANCED MATERIALS
ISSN0935-9648
Pages24
AbstractTopological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.
Keywordferroelectrics heterostructures magnetic materials multiferroics thin films topological structures
Funding OrganizationNational Natural Science Foundation of China ; Guangdong Basic and Applied Basic Research Foundation ; Central Military Commission Science and Technology Committee ; Science and Technology Program of Guangzhou ; Youth Innovation Promotion Association CAS ; Shenzhen Science and Technology Program ; Bureau of Industry and Information Technology of Shenzhen through the Graphene Manufacturing Innovation Center ; Science and Technology Research Items of Shenzhen ; High-Level Special Fund ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences ; National Science Foundation
DOI10.1002/adma.202000857
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51972160] ; National Natural Science Foundation of China[51802057] ; National Natural Science Foundation of China[U1932116] ; National Natural Science Foundation of China[51901081] ; National Natural Science Foundation of China[11574091] ; Guangdong Basic and Applied Basic Research Foundation[2020B1515020029] ; Central Military Commission Science and Technology Committee[18-163-00-TS-004-026-01] ; Science and Technology Program of Guangzhou[2019050001] ; Youth Innovation Promotion Association CAS[2016177] ; Shenzhen Science and Technology Program[KQTD20170809110344233] ; Bureau of Industry and Information Technology of Shenzhen through the Graphene Manufacturing Innovation Center[201901161514] ; Science and Technology Research Items of Shenzhen[JCYJ20170412153325679] ; Science and Technology Research Items of Shenzhen[JCYJ20180504165650580] ; High-Level Special Fund[G02206303] ; High-Level Special Fund[G02206403] ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division[DE-AC02-05-CH11231] ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences[DE-SC-0012375] ; National Science Foundation[OISE-1545907] ; National Science Foundation[DMR-1608938] ; National Science Foundation[DMR-1708615]
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000560688600001
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:14[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/140360
Collection中国科学院金属研究所
Corresponding AuthorZhao, Weiwei; Chen, Zuhuang
Affiliation1.Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Peoples R China
2.South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Peoples R China
3.South China Normal Univ, South China Acad Adv Optoelect, Inst Adv Mat, Guangzhou 510006, Peoples R China
4.South China Normal Univ, Natl Ctr Int Res Green Optoelect, Guangzhou 510006, Peoples R China
5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China
6.Harbin Inst Technol, Flexible Printed Elect Technol Ctr, Shenzhen 518055, Peoples R China
7.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
8.Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
9.Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
Recommended Citation
GB/T 7714
Chen, Shanquan,Yuan, Shuai,Hou, Zhipeng,et al. Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures[J]. ADVANCED MATERIALS,2020:24.
APA Chen, Shanquan.,Yuan, Shuai.,Hou, Zhipeng.,Tang, Yunlong.,Zhang, Jinping.,...&Chen, Zuhuang.(2020).Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures.ADVANCED MATERIALS,24.
MLA Chen, Shanquan,et al."Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures".ADVANCED MATERIALS (2020):24.
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