Seamlessly Splicing Metallic SnxMo1-xS2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor | |
Shao, Gonglei1; Lu, Yizhen2; Hong, Jinhua3; Xue, Xiong-Xiong4,5; Huang, Jinqiang6,7; Xu, Zheyuan8; Lu, Xiangchao2; Jin, Yuanyuan1; Liu, Xiao1; Li, Huimin1; Hu, Sheng; Suenaga, Kazu3; Han, Zheng6,7; Jiang, Ying9; Li, Shisheng10; Feng, Yexin4; Pan, Anlian8; Lin, Yung-Chang3; Cao, Yang2; Liu, Song1 | |
Corresponding Author | Pan, Anlian(anlian.pan@hnu.edu.cn) ; Lin, Yung-Chang(yc-lin@aist.go.jp) ; Cao, Yang(yangcao@xmu.edu.cn) ; Liu, Song(liusong@hnu.edu.cn) |
2020-11-16 | |
Source Publication | ADVANCED SCIENCE
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Volume | 7Issue:24Pages:8 |
Abstract | Accurate design of the 2D metal-semiconductor (M-S) heterostructure via the covalent combination of appropriate metallic and semiconducting materials is urgently needed for fabricating high-performance nanodevices and enhancing catalytic performance. Hence, the lateral epitaxial growth of M-S SnxMo1-xS2/MoS2 heterostructure is precisely prepared with in situ growth of metallic SnxMo1-xS2 by doping Sn atoms at semiconductor MoS2 edge via one-step chemical vapor deposition. The atomically sharp interface of this heterostructure exhibits clearly distinguished performance based on a series of characterizations. The oxygen evolution photoelectrocatalytic performance of the epitaxial M-S heterostructure is 2.5 times higher than that of pure MoS2 in microreactor, attributed to the efficient electron-hole separation and rapid charge transfer. This growth method provides a general strategy for fabricating seamless M-S lateral heterostructures by controllable doping heteroatoms. The M-S heterostructures show increased carrier migration rate and eliminated Fermi level pinning effect, contributing to their potential in devices and catalytic system. |
Keyword | chemical vapor deposition covalent bonds heteroatom doping metal– semiconductor heterostructures photoelectrocatalytic performance |
Funding Organization | National Key R&D Program of China ; National Natural Science Foundation of China ; Natural Science Foundation of Hunan Province, China ; Fundamental Research Funds for the Central Universities from Hunan University ; JSPS-KAKENHI ; National Basic Research Programs of China |
DOI | 10.1002/advs.202002172 |
Indexed By | SCI |
Language | 英语 |
Funding Project | National Key R&D Program of China[2018YFA0209500] ; National Key R&D Program of China[2018YFA0306900] ; National Natural Science Foundation of China[11974105] ; National Natural Science Foundation of China[21975067] ; National Natural Science Foundation of China[21705036] ; National Natural Science Foundation of China[21872114] ; National Natural Science Foundation of China[U19A2090] ; National Natural Science Foundation of China[51525202] ; Natural Science Foundation of Hunan Province, China[2018JJ3035] ; Fundamental Research Funds for the Central Universities from Hunan University ; JSPS-KAKENHI[JP16H06333] ; JSPS-KAKENHI[18K14119] ; National Basic Research Programs of China[2016YFA0300901] |
WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science |
WOS Subject | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS ID | WOS:000590295000001 |
Publisher | WILEY |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/141357 |
Collection | 中国科学院金属研究所 |
Corresponding Author | Pan, Anlian; Lin, Yung-Chang; Cao, Yang; Liu, Song |
Affiliation | 1.Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemo Biosensing & Chemometr, Inst Chem Biol & Nanomed ICBN, Changsha 410082, Peoples R China 2.Xiamen Univ, Coll Chem & Chem Engn, Collaborat Innovat Ctr Chem Energy Mat IChEM, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China 3.Natl Inst Adv Ind Sci & Technol, Nanomat Res Inst, Tsukuba, Ibaraki 3058565, Japan 4.Hunan Univ, Sch Phys & Elect, Hunan Prov Key Lab Low Dimens Struct Phys & Devic, Changsha 410082, Peoples R China 5.Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Peoples R China 6.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 7.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 8.Hunan Univ, Coll Mat Sci & Engn, State Key Lab Chemo Biosensing & Chemometr, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Peoples R China 9.Hunan Univ, Sch Phys & Elect, Changsha 410082, Peoples R China 10.Natl Inst Mat Sci NIMS, Int Ctr Young Scientists ICYS, Tsukuba, Ibaraki 3050044, Japan |
Recommended Citation GB/T 7714 | Shao, Gonglei,Lu, Yizhen,Hong, Jinhua,et al. Seamlessly Splicing Metallic SnxMo1-xS2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor[J]. ADVANCED SCIENCE,2020,7(24):8. |
APA | Shao, Gonglei.,Lu, Yizhen.,Hong, Jinhua.,Xue, Xiong-Xiong.,Huang, Jinqiang.,...&Liu, Song.(2020).Seamlessly Splicing Metallic SnxMo1-xS2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor.ADVANCED SCIENCE,7(24),8. |
MLA | Shao, Gonglei,et al."Seamlessly Splicing Metallic SnxMo1-xS2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor".ADVANCED SCIENCE 7.24(2020):8. |
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