| Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3 (110) multilayered films | |
| Geng, W. R.1,2; Tang, Y. L.1; Zhu, Y. L.1; Wang, Y. J.1; Ma, X. L.1,3 | |
| Corresponding Author | Ma, X. L.(xlma@imr.ac.cn) |
| 2020-11-14 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| ISSN | 0021-8979 |
| Volume | 128Issue:18Pages:8 |
| Abstract | Topological structures in ferroelectric materials play a crucial role in the potential applications of high-density memories and are currently the subject of intensive interest. Interfaces with local symmetry breaking have garnered wide attention in designing the topological domains in ferroelectric films by regulating the different boundary conditions. Here, we present multiple topological polar nanodomains near the heterointerfaces in the trilayered systems of BiFeO3/GdScO3/BiFeO3 grown on [110]-oriented TbScO3 substrates. The formation and stabilization of these topological polar states depend on the electrical and mechanical boundary conditions of the BiFeO3 layers. Aberration-corrected transmission electron microscopy observation reveals that the topological polar nanodomains, including nano-scale vortices and flux-closures at the termination of 109 degrees domain walls and the semi-vortices at the end of 180 degrees domain walls, are stabilized in the BiFeO3 layers confined by two orthorhombic structures. Furthermore, the formation of flux-closures near the BiFeO3/GdScO3 interface is influenced by the domain structures in the adjacent BiFeO3 layers, which is preferred by the 180 degrees domain patterns rather than the 109 degrees domain patterns. This work provides further understanding into the influences of boundary conditions on topological polar configurations and would offer guidance for designing novel topological states that enable the development of high-density memory devices. |
| Funding Organization | Key Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China (NNSFC) ; Shenyang National Laboratory for Materials Science ; Youth Innovation Promotion Association CAS |
| DOI | 10.1063/5.0028370 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China (NNSFC)[51971223] ; National Natural Science Foundation of China (NNSFC)[51671194] ; National Natural Science Foundation of China (NNSFC)[51922100] ; Shenyang National Laboratory for Materials Science[L2019R06] ; Shenyang National Laboratory for Materials Science[L2019R08] ; Shenyang National Laboratory for Materials Science[L2019F01] ; Shenyang National Laboratory for Materials Science[L2019F13] ; Youth Innovation Promotion Association CAS[2016177] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000591873200002 |
| Publisher | AMER INST PHYSICS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/141384 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Ma, X. L. |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Wenhua Rd 72, Shenyang 110016, Peoples R China 3.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Peoples R China |
| Recommended Citation GB/T 7714 | Geng, W. R.,Tang, Y. L.,Zhu, Y. L.,et al. Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3 (110) multilayered films[J]. JOURNAL OF APPLIED PHYSICS,2020,128(18):8. |
| APA | Geng, W. R.,Tang, Y. L.,Zhu, Y. L.,Wang, Y. J.,&Ma, X. L..(2020).Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3 (110) multilayered films.JOURNAL OF APPLIED PHYSICS,128(18),8. |
| MLA | Geng, W. R.,et al."Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3 (110) multilayered films".JOURNAL OF APPLIED PHYSICS 128.18(2020):8. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment