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Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse
Zhang, Xinglai1; Li, Jing1; Ma, Zongyi1; Zhang, Jian1; Leng, Bing2; Liu, Baodan1
Corresponding AuthorLiu, Baodan(baodanliu@hotmail.com)
2020-10-21
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume12Issue:42Pages:47721-47728
AbstractMolybdenum disulfide (MoS2) as a typical two-dimensional (2D) transition-metal dichalcogenide exhibits great potential applications for the next-generation nanoelectronics such as photodetectors. However, most MoS2-based photodetectors hold obvious disadvantages including a narrow spectral response in the visible region, poor photoresponsivity, and slow response speed. Here, for the first time, we report the design of a two-dimensional MoS2/GaN van der Waals (vdWs) heterostructure photodetector consisting of few-layer p-type MoS2 and very thin n-type GaN flakes. Thanks to the good crystal quality of the 2D-GaN flake and the built-in electric field in the interface depletion region of the MoS2/GaN p-n junction, photogenerated carriers can be rapidly separated and more excitons are collected by electrodes toward the high photoresponsivity of 328 A/W and a fast response time of 400 ms under the illumination of 532 nm light, which is seven times faster than pristine MoS2 flake. Additionally, the response spectrum of the photodetector is also broadened to the UV region with a high photoresponsivity of 27.1 A/W and a fast response time of 300 ms after integrating with the 2D-GaN flake, exhibiting an advantageous synergetic effect. These excellent performances render MoS2/GaN vdWs heterostructure photodetectors as promising and competitive candidates for next-generation optoelectronic devices.
KeywordMoS2 GaN two dimension van der Waals heterostructure photodetectors
Funding OrganizationShenyang Science and Technology Program ; National Natural Science Foundation of China ; Shenyang National Laboratory for Materials Science ; Youth Innovation Promotion Association, Chinese Academy of Sciences ; Liaoning Province Natural Science Fund Program
DOI10.1021/acsami.0c11021
Indexed BySCI
Language英语
Funding ProjectShenyang Science and Technology Program[18-013-0-52] ; National Natural Science Foundation of China[51702326] ; National Natural Science Foundation of China[51872296] ; Shenyang National Laboratory for Materials Science[L2019F36] ; Youth Innovation Promotion Association, Chinese Academy of Sciences[2019197] ; Liaoning Province Natural Science Fund Program[2019-MS-333]
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000584489800056
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/141475
Collection中国科学院金属研究所
Corresponding AuthorLiu, Baodan
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.China Med Univ, Affiliated Hosp 1, Dept Plast Surg, Shenyang 110001, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Xinglai,Li, Jing,Ma, Zongyi,et al. Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(42):47721-47728.
APA Zhang, Xinglai,Li, Jing,Ma, Zongyi,Zhang, Jian,Leng, Bing,&Liu, Baodan.(2020).Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse.ACS APPLIED MATERIALS & INTERFACES,12(42),47721-47728.
MLA Zhang, Xinglai,et al."Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse".ACS APPLIED MATERIALS & INTERFACES 12.42(2020):47721-47728.
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