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掠射角溅射沉积纳米结构氧化钨薄膜
Alternative TitleNano-structured WO3 Thin Films Deposited by Glancing Angle Magnetron Sputtering
王美涵1; 温佳星1; 陈昀1; 雷浩2
2018
Source Publication无机材料学报
ISSN1000-324X
Volume33.0Issue:012Pages:1303-1308
Abstract采用掠射角反应磁控溅射法在室温下沉积了纳米结构氧化钨(WO3)薄膜,并对薄膜进行热处理。利用场发射扫描电镜(FE-SEM)和X射线衍射仪(XRD)对氧化钨薄膜的形貌和结构进行了表征。当掠射角度为80?时,采用直流电源沉积的氧化钨薄膜具有纳米斜柱状结构,而采用脉冲直流电源沉积的薄膜呈现纳米孔结构。纳米薄膜经450℃热处理3h后,纳米斜柱彼此连接,失去规整结构,而纳米孔结构的孔尺寸变大。XRD分析表明室温沉积的氧化钨薄膜具有无定形结构,经450℃热处理1h后,转变为单斜晶相。具有纳米斜柱状或纳米孔结构氧化钨薄膜的光学调制幅度在波长600nm时达到60%,且电致变色性能可逆。
Other AbstractNano-structured tungsten oxide (WO 3 ) thin films were deposited at room temperature by glancing anglereactive magnetron sputtering and then annealed at 450℃ in air. The films were characterized by field-emissionscanning electron microscope (FE-SEM) and X-ray diffraction (XRD). The WO 3 thin film deposited by DC magnetron sputtering at 80° glancing angle exhibited oblique nano-column structure, while deposited by pulsed DC magnetron sputtering at the same angle exhibits nano-pore structure. After annealing at 450℃ for 3 h, the obliquenanocolums are conjunct with each other but the nano-pore structured remains with bigger pore size. XRD analysisreveals that WO 3 thin films deposited at room temperature demonstrate amorphous structure. The amorphous structure will transfers to monoclinic phase after annealing at 450℃ for 1 h. Transmittance difference between colorization and bleaching of nano-structured WO 3 thin film reaches 60% at wavelength of 600 nm. Electrochromic properties of nano-structured WO 3 thin films are highly reversible.
Keyword氧化钨薄膜 纳米结构 掠射角 磁控溅射
Indexed ByCSCD
Language中文
CSCD IDCSCD:6397724
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/141579
Collection中国科学院金属研究所
Affiliation1.沈阳大学
2.中国科学院金属研究所
Recommended Citation
GB/T 7714
王美涵,温佳星,陈昀,等. 掠射角溅射沉积纳米结构氧化钨薄膜[J]. 无机材料学报,2018,33.0(012):1303-1308.
APA 王美涵,温佳星,陈昀,&雷浩.(2018).掠射角溅射沉积纳米结构氧化钨薄膜.无机材料学报,33.0(012),1303-1308.
MLA 王美涵,et al."掠射角溅射沉积纳米结构氧化钨薄膜".无机材料学报 33.0.012(2018):1303-1308.
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