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直流反应磁控溅射相关工艺条件对TiO2薄膜反射率性质的影响
Alternative TitleGrowth Conditions and Reflectance of D C Magnetron Sputtered Tio2 Films
王贺权; 巴德纯; 沈辉; 闻立时
2008
Source Publication真空科学与技术学报
ISSN1672-7126
Volume28.0Issue:1.0Pages:55-58
Abstract应用直流反应磁控溅射设备在硅基底上制备TiO2薄膜,利用n&k仪对薄膜的反射率进行检测,结果表明TiO2薄膜可以作为太阳电池减反射薄膜应用,并且通过改变工艺条件可以调控薄膜的反射低谷。当总压强为2×10^-1Pa、O2流量为15sccm、靶基距为190mm、温度为60℃的条件下制备的Ti02薄膜的减反射效果最好。
Other AbstractThe reflectance of the TiO2 films, grown by D C reactive magnetron sputtering on silicon substrates, was studied. The results show that TiO2 films can be good anti-reflectance materials in solar cells and that judicious choice of the film growth conditions may improve its anti-reflectance. The optimized growth conditions are as follows:total gas pressure 2 ×10^-1 Pa,oxygen flow rate, 15 sccm,substrate temperature,60℃ and substrate-target separation, 190 mm.
Keyword直流反应磁控溅射 二氧化钛薄膜 太阳电池 反射率
Indexed ByCSCD
Language中文
CSCD IDCSCD:3204854
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/141812
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
王贺权,巴德纯,沈辉,等. 直流反应磁控溅射相关工艺条件对TiO2薄膜反射率性质的影响[J]. 真空科学与技术学报,2008,28.0(1.0):55-58.
APA 王贺权,巴德纯,沈辉,&闻立时.(2008).直流反应磁控溅射相关工艺条件对TiO2薄膜反射率性质的影响.真空科学与技术学报,28.0(1.0),55-58.
MLA 王贺权,et al."直流反应磁控溅射相关工艺条件对TiO2薄膜反射率性质的影响".真空科学与技术学报 28.0.1.0(2008):55-58.
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