多铁材料BiFeO3薄膜中失配压应变导致的界面重构 | |
Alternative Title | The interface reconstruction induced by compressive strain in multiferroic BiFeO3 films |
耿皖荣1; 朱银莲1; 唐云龙1; 马秀良1 | |
2019 | |
Source Publication | 电子显微学报
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ISSN | 1000-6281 |
Volume | 38.0Issue:006Pages:579-584 |
Abstract | 本文利用透射电子显微术研究了外延生长的多铁BiFeO3/NdGaO3(110)O薄膜中的界面重构现象。高分辨HAADF-STEM像表明:衬底的截止层为GaO2原子层;在BiFeO3/NdGaO3界面处,Nd元素部分取代了BiFeO3的Bi元素,从而在平行于界面的第一原子层形成了BiO-NdO交替排列的界面重构形态。利用寻峰拟合方法对高分辨HAADF-STEM像的分析表明,这种界面重构的发生可以部分释放衬底施加的压应变。本研究提出了多铁材料BiFeO3薄膜中一种新的应变释放途径。 |
Other Abstract | The interface reconstruction in epitaxial BiFeO3/NdG aO3(110)O films was analyzed by transmission electron microscopy.The atomically resolved HAADF-STEM images demonstrated that the t ermination of the substrate was GaO2 layer.At the first layer of interface,the element of Nd in substrate partially substituted f or the Bi element in BFO film,leading to the formation of interfac e reconstruction,arranged alternatively in the form of BiO column and NdO column.The analyses of HAADF-STEM images with peak finding revealed that the interface reconstruction could partial ly release the compressive strain from substrates.These results have proposed an alternative way to release strain in multiferroic BFO films. |
Keyword | 多铁薄膜 界面重构 应变释放 扫描透射电子显微镜 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:6636433 |
Citation statistics |
Cited Times:7[CSCD]
[CSCD Record]
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Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/142211 |
Collection | 中国科学院金属研究所 |
Affiliation | 1.中国科学院金属研究所 2.中国科学技术大学 3.兰州理工大学 |
Recommended Citation GB/T 7714 | 耿皖荣,朱银莲,唐云龙,等. 多铁材料BiFeO3薄膜中失配压应变导致的界面重构[J]. 电子显微学报,2019,38.0(006):579-584. |
APA | 耿皖荣,朱银莲,唐云龙,&马秀良.(2019).多铁材料BiFeO3薄膜中失配压应变导致的界面重构.电子显微学报,38.0(006),579-584. |
MLA | 耿皖荣,et al."多铁材料BiFeO3薄膜中失配压应变导致的界面重构".电子显微学报 38.0.006(2019):579-584. |
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