Alternative TitleInfluence of Bias Voltage and N2 Partial Pressure on Structure of TiN Film and Performance of Film/Substrate
杨洪刚; 李曙; 张荣禄
Source Publication中国表面工程
Other AbstractThe TiN film was prepared by multi-arc ion plating process on titanium alloy substrate or carbon steel substrate with different bias voltage and different nitrogen partial pressure. The phase structure, residual stress inside film, hardness of film/substrate system, adhesive strength between film and substrate, and tribolocical behavior were studied. The test results show that the bias voltage affects phase structure and residual stress of film. The adhesive strength of film/substrate will decrease and the tribological performance will be affected consequently when bias voltage is excessive high or low. As N2 partial pressure increases the particle size of Ti molten droplet becomes large, the amount of Ti2N decreases, and the hardness of film heightens. The excess on highness or lowness of N2 partial pressure can decrease critical load in scratching test. In the range of the tests, the friction coefficient of film/substrate system was decreased but wear resistance was not expectant improved with the increase of N2 partial pressure
Keyword微纳米材料 摩擦磨损 润滑 自修复
Indexed ByCSCD
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Cited Times:6[CSCD]   [CSCD Record]
Document Type期刊论文
Recommended Citation
GB/T 7714
杨洪刚,李曙,张荣禄. 偏压和氮分压对TiN膜层结构和膜/基体系性能的影响[J]. 中国表面工程,2009,22.0(002):20-25.
APA 杨洪刚,李曙,&张荣禄.(2009).偏压和氮分压对TiN膜层结构和膜/基体系性能的影响.中国表面工程,22.0(002),20-25.
MLA 杨洪刚,et al."偏压和氮分压对TiN膜层结构和膜/基体系性能的影响".中国表面工程 22.0.002(2009):20-25.
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