Buildup of Sn@CNT nanorods by in-situ thermal plasma and the electronic transport behaviors

IMR OpenIR

	Buildup of Sn@CNT nanorods by in-situ thermal plasma and the electronic transport behaviors
其他题名	Buildup of Sn@CNT nanorods by in-situ thermal plasma and the electronic transport behaviors
	Wang Dongxing 1; Li Da 2; Muhammad Javid 1; Zhou Yuanliang 1; Zhang Xuefeng 3; Wang Ziming 1; Lu Shanshan 1; Dong Xinglong 1; Zhang Zhidong 2
	2018
发表期刊	SCIENCE CHINA-MATERIALS
ISSN	2095-8226
卷号	61 期号:12 页码:1605-1613
摘要	Monocrystal Sn nanorods encapsulated in the multi-walled carbon nanotubes (Sn@CNT NRs), were fabricated by a facile arc-discharge plasma process, using bulk Sn as the raw target and methane as the gaseous carbon source. The typical Sn@CNT NRs are 40-90 nm in diameter and 400-500 nm in length. The CNTs protect the inner Sn nanorods from oxidation. Temperature dependent I-V curve and electronic resistance reveal that the dielectric behavior of Sn@CNT NRs is attributed to the multi-wall CNTs shell and follows Mott-David variable range hopping lnR(T)proportional to T-1/4 model above the superconducting critical temperature of 3.69 K, with semiconductor-superconductor transition (SST). Josephson junction of Sn/CNT/Sn layered structure is responsible for the superconducting behavior of Sn@CNT NRs.
其他摘要	Monocrystal Sn nanorods encapsulated in the multi-walled carbon nanotubes(Sn@CNT NRs),were fabricated by a facile arc-discharge plasma process,using bulk Sn as the raw target and methane as the gaseous carbon source.The typical Sn@CNT NRs are 40-90 nm in diameter and 400-500 nm in length.The CNTs protect the inner Sn nanorods from oxidation.Temperature dependent I-V curve and electronic resistance reveal that the dielectric behavior of Sn@CNT NRs is attributed to the multi-wall CNTs shell and follows Mott-David variable range hopping lnR(T)∞T~(-1/4) model above the superconducting critical temperature of 3.69 K,with semiconductor-superconductor transition(SST).Josephson junction of Sn/CNT/Sn layered structure is responsible for the superconducting behavior of Sn@CNT NRs.
关键词	MULTIWALLED CARBON NANOTUBES QUANTUM PHASE-TRANSITIONS SUPERCONDUCTIVITY NANOWIRES GRAPHENE OSCILLATIONS DESTRUCTION COMPOSITES CONDUCTION carbon nanotubes nanocomposite dielectric variable range hopping Josephson junction
收录类别	CSCD
语种	英语
资助项目	[National Natural Science Foundation of China]
CSCD记录号	CSCD:6384553
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/146730
专题	中国科学院金属研究所
作者单位	1.大连理工大学 2.中国科学院 3.中国科学院金属研究所
推荐引用方式 GB/T 7714	Wang Dongxing,Li Da,Muhammad Javid,et al. Buildup of Sn@CNT nanorods by in-situ thermal plasma and the electronic transport behaviors[J]. SCIENCE CHINA-MATERIALS,2018,61(12):1605-1613.
APA	Wang Dongxing.,Li Da.,Muhammad Javid.,Zhou Yuanliang.,Zhang Xuefeng.,...&Zhang Zhidong.(2018).Buildup of Sn@CNT nanorods by in-situ thermal plasma and the electronic transport behaviors.SCIENCE CHINA-MATERIALS,61(12),1605-1613.
MLA	Wang Dongxing,et al."Buildup of Sn@CNT nanorods by in-situ thermal plasma and the electronic transport behaviors".SCIENCE CHINA-MATERIALS 61.12(2018):1605-1613.