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Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature
Alternative TitleRemoving Impurity of cBN Crystal Prepared at High Pressure and High Temperature
Ji XiaoRui; Yang XiaoHong
2012
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume29Issue:3
AbstractThe black cubic boron nitride (cBN) single crystal is synthesized by using hBN-LiH and hBN-Li3N-B as the raw materials at high temperature and high pressure (HTHP). The colors of the cBN crystal synthesized in an hBN-Li3N-B system vary from transparent yellow, half-transparent and then opaque black with the increasing B content in the raw materials. It is worth noting that a trigonal shadow is presented at the center of the cBN crystal synthesized in the hBN-Li3N-B system but can not be found in the hBN-LiH system. Analyzing the Raman spectrum, we find that the darkening and the trigonal shadow in the cBN crystal may be due to the presence of excess B atoms. The above-mentioned phenomenon can be determined by removing impurity capacity and growth environment of the cBN crystal.
Other AbstractThe black cubic boron nitride (cBN) single crystal is synthesized by using hBN-LiH and hBN-Li 3 N-B as the raw materials at high temperature and high pressure (HTHP). The colors of the cBN crystal synthesized in an hBN-Li 3 N-B system vary from transparent yellow, half-transparent and then opaque black with the increasing B content in the raw materials. It is worth noting that a trigonal shadow is presented at the center of the cBN crystal synthesized in the hBN-Li 3 N-B system but can not be found in the hBN-LiH system. Analyzing the Raman spectrum, we find that the darkening and the trigonal shadow in the cBN crystal may be due to the presence of excess B atoms. The above-mentioned phenomenon can be determined by removing impurity capacity and growth environment of the cBN crystal.
KeywordCUBIC BORON-NITRIDE SINGLE-CRYSTAL SYSTEM NUCLEATION
Indexed ByCSCD
Language英语
CSCD IDCSCD:4466349
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/148236
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
Ji XiaoRui,Yang XiaoHong. Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature[J]. CHINESE PHYSICS LETTERS,2012,29(3).
APA Ji XiaoRui,&Yang XiaoHong.(2012).Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature.CHINESE PHYSICS LETTERS,29(3).
MLA Ji XiaoRui,et al."Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature".CHINESE PHYSICS LETTERS 29.3(2012).
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