| Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature | |
| Alternative Title | Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature |
| Ji XiaoRui; Yang XiaoHong | |
| 2012 | |
| Source Publication | CHINESE PHYSICS LETTERS
 |
| ISSN | 0256-307X |
| Volume | 29Issue:3 |
| Abstract | The black cubic boron nitride (cBN) single crystal is synthesized by using hBN-LiH and hBN-Li3N-B as the raw materials at high temperature and high pressure (HTHP). The colors of the cBN crystal synthesized in an hBN-Li3N-B system vary from transparent yellow, half-transparent and then opaque black with the increasing B content in the raw materials. It is worth noting that a trigonal shadow is presented at the center of the cBN crystal synthesized in the hBN-Li3N-B system but can not be found in the hBN-LiH system. Analyzing the Raman spectrum, we find that the darkening and the trigonal shadow in the cBN crystal may be due to the presence of excess B atoms. The above-mentioned phenomenon can be determined by removing impurity capacity and growth environment of the cBN crystal. |
| Other Abstract | The black cubic boron nitride (cBN) single crystal is synthesized by using hBN-LiH and hBN-Li 3 N-B as the raw materials at high temperature and high pressure (HTHP). The colors of the cBN crystal synthesized in an hBN-Li 3 N-B system vary from transparent yellow, half-transparent and then opaque black with the increasing B content in the raw materials. It is worth noting that a trigonal shadow is presented at the center of the cBN crystal synthesized in the hBN-Li 3 N-B system but can not be found in the hBN-LiH system. Analyzing the Raman spectrum, we find that the darkening and the trigonal shadow in the cBN crystal may be due to the presence of excess B atoms. The above-mentioned phenomenon can be determined by removing impurity capacity and growth environment of the cBN crystal. |
| Keyword | CUBIC BORON-NITRIDE SINGLE-CRYSTAL SYSTEM NUCLEATION |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:4466349 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/148236 |
| Collection | 中国科学院金属研究所 |
| Affiliation | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | Ji XiaoRui,Yang XiaoHong. Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature[J]. CHINESE PHYSICS LETTERS,2012,29(3). |
| APA | Ji XiaoRui,&Yang XiaoHong.(2012).Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature.CHINESE PHYSICS LETTERS,29(3). |
| MLA | Ji XiaoRui,et al."Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature".CHINESE PHYSICS LETTERS 29.3(2012). |
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