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Metal–insulator transition in few-layered GaTe transistors
Xiuxin Xia1; Xiaoxi Li1; Hanwen Wang1
2020
Source Publication半导体学报:英文版
ISSN1674-4926
Volume41.0Issue:007Pages:28-32
AbstractTwo-dimensional(2D)materials have triggered enormous interest thanks to their interesting properties and potential applications,ranging from nanoelectronics to energy catalysis and biomedicals.In addition to other widely investigated 2D materials,GaTe,a layered material with a direct band gap of~1.7 e V,is of importance for applications such as optoelectronics.However,detailed information on the transport properties of GaTe is yet to be explored,especially at low temperatures.Here,we report on electrical transport measurements on few-layered GaTe field effect transistors(FETs)encapsulated by h-BN at different temperatures.We find that by tuning the carrier density,ambipolar transport was realized in GaTe devices,and an electrical-field-induced metal to insulator transition(MIT)was observed when it was hole doped.The mobilities of GaTe devices show a clear dependence on temperature and increase with the decrease of temperature,reaching~1200 cm2 V-1s-1 at 3 K.Our findings may inspire further electronic studies in devices based on GaTe.
Keywordmetal-insulator transition gate tunable GaTe field effect transistors
Indexed ByCSCD
Language中文
CSCD IDCSCD:6756707
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/151646
Collection中国科学院金属研究所
Affiliation1.中国科学院金属研究所
2.School of Material Science and Engineering,University of Science and Technology of China
Recommended Citation
GB/T 7714
Xiuxin Xia,Xiaoxi Li,Hanwen Wang. Metal–insulator transition in few-layered GaTe transistors[J]. 半导体学报:英文版,2020,41.0(007):28-32.
APA Xiuxin Xia,Xiaoxi Li,&Hanwen Wang.(2020).Metal–insulator transition in few-layered GaTe transistors.半导体学报:英文版,41.0(007),28-32.
MLA Xiuxin Xia,et al."Metal–insulator transition in few-layered GaTe transistors".半导体学报:英文版 41.0.007(2020):28-32.
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