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立方碳化硅薄膜的层错结构特征
Alternative TitleStructural feature of the stacking faults in cubic SiC films
闫学习; 姚婷婷; 陶昂; 杨兵; 陈春林; 马秀良; 叶恒强
2019
Source Publication电子显微学报
ISSN1000-6281
Volume38Issue:5Pages:459-463
Abstract本文利用微波等离子体增强化学气相沉积(MPCVD)和脉冲激光沉积(PLD)等薄膜制备技术分别在硅(Si) {001}基片上生长了立方碳化硅(3C-SiC)薄膜。两种方法制备的3C-SiC薄膜均与Si基片具有相同的外延关系3C-SiC〈110〉{001}//Si〈110〉{001},但PLD法制备的3C-SiC薄膜具有较低的层错密度并与Si基片间形成了平直的界面。基于高角环形暗场像(HAADF)原子结构表征的结果,探讨了3C-SiC薄膜中内禀层错、外禀层错、微孪晶和亚稳A-A'型层错的形成机制及它们之间的结构演化关系。
Keyword碳化硅 层错 原子结构 球差校正透射电子显微术
Indexed ByCSCD
Language中文
CSCD IDCSCD:6586824
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/152545
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
闫学习,姚婷婷,陶昂,等. 立方碳化硅薄膜的层错结构特征[J]. 电子显微学报,2019,38(5):459-463.
APA 闫学习.,姚婷婷.,陶昂.,杨兵.,陈春林.,...&叶恒强.(2019).立方碳化硅薄膜的层错结构特征.电子显微学报,38(5),459-463.
MLA 闫学习,et al."立方碳化硅薄膜的层错结构特征".电子显微学报 38.5(2019):459-463.
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