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Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs
REN Xiangyang1; XIA Sha1; ZHANG Zhiguo2; MENG Xing3; YU Hongmei4; WU Qi4; ZHANG Wenyi5; LI Aiwu1; YANG Han1
2019
Source Publication高等学校化学研究:英文版
ISSN1005-9040
Volume35.0Issue:006Pages:1058-1061
AbstractTwo-dimensional(2D)materials with a high density and low power consumption have become the most popular candidates for next-generation semiconductor electronic devices.As a prototype 2D material,graphene has attracted much attention owing to its stability and ultrahigh mobility.However,zero band gap of graphene leads to very low on-off ratios and thus limits its applications in electronic devices,such as transistors.Although some new 2D materials and doped graphene have nonzero band gaps,the electronic mobility is sacrificed.In this study,to open the band gap of graphene with high electronic mobility,the structure and property of BN-doped graphene were evaluated using first-principles calculations.The formation energies indicate that the six-membered BN rings doped graphene has the most favorable configuration.The band structures show that the band gaps can be opened by such type of doping.Also,the Dirac-cone-like band dispersion of graphene is mostly inhibited,ensuring high electronic mobility.Therefore,codoping BN into graphene might provide 2D materials with nonzero band gaps and high electronic mobility.
KeywordFirst-principle calculation Doping Optoeletronic property Mobility
Indexed ByCSCD
Language中文
Funding Project[National Key Research and Development Program of China] ; [National Natural Science Foundation of China] ; [Fund of the High-performance Computing Center(HPCC) of Jilin University, China]
CSCD IDCSCD:6626723
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/153197
Collection中国科学院金属研究所
Affiliation1.State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,P.R.China
2.中国科学院金属研究所
3.College of Physics,Jilin University,P.R.China
4.College of Computer Science and Technology,Jilin University,P.R.China
5.Systems Engineering Research Institute,P.R.China
Recommended Citation
GB/T 7714
REN Xiangyang,XIA Sha,ZHANG Zhiguo,et al. Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs[J]. 高等学校化学研究:英文版,2019,35.0(006):1058-1061.
APA REN Xiangyang.,XIA Sha.,ZHANG Zhiguo.,MENG Xing.,YU Hongmei.,...&YANG Han.(2019).Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs.高等学校化学研究:英文版,35.0(006),1058-1061.
MLA REN Xiangyang,et al."Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs".高等学校化学研究:英文版 35.0.006(2019):1058-1061.
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