Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate

IMR OpenIR

	Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate
	Sun FuLong 1; Gao LiYin 1; Liu ZhiQuan 1; Zhang Hao 3; Sugahara Tohru 3; Nagao Shijo 3; Suganuma Katsuaki 3
	2018
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	34 期号:10 页码:1885-1890
摘要	Homogeneous columnar Cu film with fully embedded nanotwins was successfully fabricated on Ti/Cu seed layer on silicon wafer. The nanotwins with thickness of tens of nanometers are generally parallel to the silicon surface, showing a strong (111) preferred orientation. The acid concentration was found to be important in influencing the formation of nanoscale twins. By adjusting the acid concentration, the nanotwins can be induced from the top columnar grain to middle columnar grain and reach the bottom equiaxed grain, and a microstructural transformation model was given. A theory focusing on the cathode overpotential was proposed to reveal the effect of acid concentration on the growth mechanism of nanoscale twins. An appropriate adsorption proportion of hydrogen on cathode (acid concentration 17 ml L-1) could increase the overpotential which supplies adequate nucleation energy for nanoscale twins formation. (C) 2018 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
其他摘要	Homogeneous columnar Cu film with fully embedded nanotwins was successfully fabricated on Ti/Cu seed layer on silicon wafer. The nanotwins with thickness of tens of nanometers are generally parallel to the silicon surface, showing a strong (111) preferred orientation. The acid concentration was found to be important in influencing the formation of nanoscale twins. By adjusting the acid concentration, the nanotwins can be induced from the top columnar grain to middle columnar grain and reach the bottom equiaxed grain, and a microstructural transformation model was given. A theory focusing on the cathode overpotential was proposed to reveal the effect of acid concentration on the growth mechanism of nanoscale twins. An appropriate adsorption proportion of hydrogen on cathode (acid concentration 17 ml L~(-1)) could increase the overpotential which supplies adequate nucleation energy for nanoscale twins formation.
关键词	NI SOLDER JOINTS NANO-SCALE TWINS INTERFACIAL RELIABILITY FE-NI COPPER METALS DEFORMATION STRENGTH DEPENDENCE BOUNDARIES Electrodeposition Nanotwinned Cu Growth mechanism Acid adsorption
收录类别	CSCD
语种	英语
资助项目	[National Natural Science Foundation of China] ; [Osaka University Visiting Scholar Program]
CSCD记录号	CSCD:6335120
引用统计	被引频次：2[CSCD] [CSCD记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/153293
专题	中国科学院金属研究所
作者单位	1.中国科学院金属研究所 2.中国科学院大学 3.Osaka Univ, Institute Sci & Ind Res, Osaka 5670047, Japan
推荐引用方式 GB/T 7714	Sun FuLong,Gao LiYin,Liu ZhiQuan,et al. Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2018,34(10):1885-1890.
APA	Sun FuLong.,Gao LiYin.,Liu ZhiQuan.,Zhang Hao.,Sugahara Tohru.,...&Suganuma Katsuaki.(2018).Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,34(10),1885-1890.
MLA	Sun FuLong,et al."Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 34.10(2018):1885-1890.