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界面结构对SiCf/Al复合材料性能和声发射行为的影响
郭延风; 朱祖铭; 石南林; 戴兵
1999
Source Publication材料研究学报
ISSN1005-3093
Volume13.0Issue:1.0Pages:76-80
Abstract运用高分辨场发射扫描电镜(FE-SEM)和声发射(AE)测试研究了SiC纤维铝基复合材料的不同界面组成和界面产物及其对复合材料性能和AE行为的影响发现富碳自理的SiCf/Al生成Al4C3脆性界面,在伸过程中界面脆断产生许多中幅AE信号,而富SiO2处理的SiCf/Al生成韧工较高的富氧产物,界面强度较高,在形变过程中不易发生界面断裂,不产生中幅AE信号。
Keyword声发射 界面 碳化硅/铝 复合材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:550695
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/156299
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
郭延风,朱祖铭,石南林,等. 界面结构对SiCf/Al复合材料性能和声发射行为的影响[J]. 材料研究学报,1999,13.0(1.0):76-80.
APA 郭延风,朱祖铭,石南林,&戴兵.(1999).界面结构对SiCf/Al复合材料性能和声发射行为的影响.材料研究学报,13.0(1.0),76-80.
MLA 郭延风,et al."界面结构对SiCf/Al复合材料性能和声发射行为的影响".材料研究学报 13.0.1.0(1999):76-80.
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