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用正电子湮没技术研究Zr对Ni3Al缺陷态的影响
谷月峰; 邓文; 郭建亭; 熊良钺; 林栋梁
1995
Source Publication金属学报
ISSN0412-1961
Volume31.0Issue:005Pages:B238-B240
Abstract本文用正电子湮没技术(PTA)研究了含不同Zr量多晶Ni3Al的e^+寿命谱,结果表明:在Ni3Al中加入Zr,一部分Zr原子进行原子替位,晶格发生畸变,导致基体中正电子寿命(τ1)增长;另一部分在晶界偏聚的Zr调整了晶界结构,使平均寿命(τ)下降,当Zr量为1.2at-5时,缺陷态的寿命τ2显著增长,表明有自由体积较大的缺陷组态生成。
Keyword正电子湮没 Ni3Al 缺陷态 金属间化合物
Indexed ByCSCD
Language中文
CSCD IDCSCD:938895
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/158035
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
谷月峰,邓文,郭建亭,等. 用正电子湮没技术研究Zr对Ni3Al缺陷态的影响[J]. 金属学报,1995,31.0(005):B238-B240.
APA 谷月峰,邓文,郭建亭,熊良钺,&林栋梁.(1995).用正电子湮没技术研究Zr对Ni3Al缺陷态的影响.金属学报,31.0(005),B238-B240.
MLA 谷月峰,et al."用正电子湮没技术研究Zr对Ni3Al缺陷态的影响".金属学报 31.0.005(1995):B238-B240.
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