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透明导电氧化物ZnO:Al(ZAO)薄膜的研究
裴志亮; 谭明晖; 陈猛; 孙超; 黄荣芳; 闻立时
2000
Source Publication金属学报
ISSN0412-1961
Volume36.0Issue:1.0Pages:72-76
Abstract用磁控反应溅射法制备了ZnO:Al薄膜,研究了薄膜方块电阻空间分布的均匀性及微观形貌,并对ZnO:Al薄膜表面各元素的化学状态和深度分布进行了XPS和AES分析,同时也讨论了薄膜的光学电学性能。
KeywordZnO:Al薄膜 电阻空间分布 光电性能 导电薄膜
Indexed ByCSCD
Language中文
CSCD IDCSCD:675485
Citation statistics
Cited Times:6[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/158148
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
裴志亮,谭明晖,陈猛,等. 透明导电氧化物ZnO:Al(ZAO)薄膜的研究[J]. 金属学报,2000,36.0(1.0):72-76.
APA 裴志亮,谭明晖,陈猛,孙超,黄荣芳,&闻立时.(2000).透明导电氧化物ZnO:Al(ZAO)薄膜的研究.金属学报,36.0(1.0),72-76.
MLA 裴志亮,et al."透明导电氧化物ZnO:Al(ZAO)薄膜的研究".金属学报 36.0.1.0(2000):72-76.
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