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Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method
Yang, Bing1; Li, Haining1,2; Yu, Biao1,2; Lu, Jiaqi1,2; Huang, Nan1; Liu, Lusheng1; Jiang, Xin1,3
Corresponding AuthorYang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn)
2021
Source PublicationCARBON
ISSN0008-6223
Volume171Pages:455-463
AbstractSiC is always produced forming diamond/SiC composite films owing to the oversaturated doping of Si atoms during the preparation of high emission SiV centers. As a higher refractive index material (n = 2.72), the presence of SiC could possibly lead to inefficient photo-luminescent (PL) collection of SiV centers with total internal reflection. In order to understand such effect, different diamond/SiC films were deposited in a 915 MHz microwave plasma CVD (MPCVD) using the reactive gas of tetramethylsilane (TMS). The microstructure and photoluminescence of SiV centers were systematically investigated. It is found that the addition of TMS gas leads to the formation of cubic beta-SiC and the refinement of diamond crystals. At the TMS gas flow of 5 sccm, the concentration of beta-SiC is about 10% and the average diamond size is about 98 nm. The film exhibits the optimized PL emission of SiV centers, with the ratio of SiV PL to diamond Raman peak being 21.4. Increasing TMS gas flow leads to the increase of the concentration of beta-SiC and the deterioration of PL emission of SiV centers. These results reveal that the introduction of TMS gas at a low flow advances the formation of diamond/SiC film containing high-brightness SiV centers. (C) 2020 Published by Elsevier Ltd.
KeywordColor center Diamond film Photo-luminescence Silicon carbide Chemical vapor deposition
Funding OrganizationNational Natural Science Foundation of China ; Liaoning Provincial Natural Science Foundation of China
DOI10.1016/j.carbon.2020.09.032
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51872294] ; Liaoning Provincial Natural Science Foundation of China[Y931L90381]
WOS Research AreaChemistry ; Materials Science
WOS SubjectChemistry, Physical ; Materials Science, Multidisciplinary
WOS IDWOS:000598371500049
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/158805
Collection中国科学院金属研究所
Corresponding AuthorYang, Bing; Jiang, Xin
Affiliation1.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Peoples R China
3.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany
Recommended Citation
GB/T 7714
Yang, Bing,Li, Haining,Yu, Biao,et al. Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method[J]. CARBON,2021,171:455-463.
APA Yang, Bing.,Li, Haining.,Yu, Biao.,Lu, Jiaqi.,Huang, Nan.,...&Jiang, Xin.(2021).Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method.CARBON,171,455-463.
MLA Yang, Bing,et al."Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method".CARBON 171(2021):455-463.
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