Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method

doi:10.1016/j.carbon.2020.09.032

IMR OpenIR

	Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method
	Yang, Bing 1; Li, Haining 1,2; Yu, Biao 1,2; Lu, Jiaqi 1,2; Huang, Nan 1; Liu, Lusheng 1; Jiang, Xin 1,3
通讯作者	Yang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn)
	2021
发表期刊	CARBON
ISSN	0008-6223
卷号	171 页码:455-463
摘要	SiC is always produced forming diamond/SiC composite films owing to the oversaturated doping of Si atoms during the preparation of high emission SiV centers. As a higher refractive index material (n = 2.72), the presence of SiC could possibly lead to inefficient photo-luminescent (PL) collection of SiV centers with total internal reflection. In order to understand such effect, different diamond/SiC films were deposited in a 915 MHz microwave plasma CVD (MPCVD) using the reactive gas of tetramethylsilane (TMS). The microstructure and photoluminescence of SiV centers were systematically investigated. It is found that the addition of TMS gas leads to the formation of cubic beta-SiC and the refinement of diamond crystals. At the TMS gas flow of 5 sccm, the concentration of beta-SiC is about 10% and the average diamond size is about 98 nm. The film exhibits the optimized PL emission of SiV centers, with the ratio of SiV PL to diamond Raman peak being 21.4. Increasing TMS gas flow leads to the increase of the concentration of beta-SiC and the deterioration of PL emission of SiV centers. These results reveal that the introduction of TMS gas at a low flow advances the formation of diamond/SiC film containing high-brightness SiV centers. (C) 2020 Published by Elsevier Ltd.
关键词	Color center Diamond film Photo-luminescence Silicon carbide Chemical vapor deposition
资助者	National Natural Science Foundation of China ; Liaoning Provincial Natural Science Foundation of China
DOI	10.1016/j.carbon.2020.09.032
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51872294] ; Liaoning Provincial Natural Science Foundation of China[Y931L90381]
WOS研究方向	Chemistry ; Materials Science
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary
WOS记录号	WOS:000598371500049
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/158805
专题	中国科学院金属研究所
通讯作者	Yang, Bing; Jiang, Xin
作者单位	1.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Peoples R China 3.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany
推荐引用方式 GB/T 7714	Yang, Bing,Li, Haining,Yu, Biao,et al. Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method[J]. CARBON,2021,171:455-463.
APA	Yang, Bing.,Li, Haining.,Yu, Biao.,Lu, Jiaqi.,Huang, Nan.,...&Jiang, Xin.(2021).Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method.CARBON,171,455-463.
MLA	Yang, Bing,et al."Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method".CARBON 171(2021):455-463.