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Self-accommodated defect structures modifying the growth of Laves phase
Yang, Tong1; Kong, Yi1; Lu, Jiangbo2; Zhang, Zhenjun3; Yang, Mingjun1; Yan, Ning4; Li, Kai1,4; Du, Yong1,4
Corresponding AuthorLi, Kai(leking@csu.edu.cn) ; Du, Yong(yong-du@csu.edu.cn)
2021-01-30
Source PublicationJOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN1005-0302
Volume62Pages:203-213
AbstractLaves phases, with the topologically close-packed structure and a chemical formula of AB(2), constitute the largest single class of intermetallics. Planar defects in Laves phases are widely investigated, especially for stacking behavior transformations through synchroshear. Here, we report the coexistence of C14, C36 and C15 structures in MgZn2 precipitates by using atomic resolution scanning transmission electron microscopy, verifying the previously predicted Laves phase transformation sequence of C14 -> C36 -> C15 also applies to MgZn2. One type of stacking fault couple in precipitates has been found to alone reduce the lattice mismatch with matrix, while some other stacking fault couples need to self-accommodate with irregular planar defects (rhombic units and flattened hexagonal units), or with five-fold symmetry structures to relieve the strain concentration. Precipitates thus grow towards an equiaxed or even round morphology, rather than the plate morphology as conventionally believed. Molecular dynamics calculations are performed to support our analysis. These findings reveal the principles governing the concurrent occurrence of various defects in laves structures, acting as an update of the widely accepted perception of random occurrence of defects during crystal growth. (C) 2020 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
KeywordHigh angle annular dark field (HAADF) Defects Stacking faults Strain
Funding OrganizationNational Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities ; Advanced Research Center of CSU ; SNU
DOI10.1016/j.jmst.2020.05.042
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51820105001] ; National Natural Science Foundation of China[51771234] ; National Natural Science Foundation of China[51531009] ; National Natural Science Foundation of China[51790482] ; Fundamental Research Funds for the Central Universities[GK201803016] ; Advanced Research Center of CSU ; SNU
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000601221700020
PublisherJOURNAL MATER SCI TECHNOL
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/158811
Collection中国科学院金属研究所
Corresponding AuthorLi, Kai; Du, Yong
Affiliation1.Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
2.Shaanxi Normal Univ, Sch Phys & Informat Technol, Xian 710119, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Mat Fatigue & Fracture Div, Shenyang 110016, Peoples R China
4.Cent South Univ, Inst Mat Microstruct, Changsha 410083, Peoples R China
Recommended Citation
GB/T 7714
Yang, Tong,Kong, Yi,Lu, Jiangbo,et al. Self-accommodated defect structures modifying the growth of Laves phase[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2021,62:203-213.
APA Yang, Tong.,Kong, Yi.,Lu, Jiangbo.,Zhang, Zhenjun.,Yang, Mingjun.,...&Du, Yong.(2021).Self-accommodated defect structures modifying the growth of Laves phase.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,62,203-213.
MLA Yang, Tong,et al."Self-accommodated defect structures modifying the growth of Laves phase".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 62(2021):203-213.
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