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Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer VSi2P4
Guo, San-Dong1; Mu, Wen-Qi1; Zhu, Yu-Tong1; Chen, Xing-Qiu2,3
Corresponding AuthorGuo, San-Dong(sandongyuwang@163.com)
2020-12-28
Source PublicationPHYSICAL CHEMISTRY CHEMICAL PHYSICS
ISSN1463-9076
Volume22Issue:48Pages:28359-28364
AbstractThe septuple-atomic-layer VSi2P4 with the same structure of experimentally synthesized MoSi2N4 is predicted to be a spin-gapless semiconductor (SGS) with the generalized gradient approximation (GGA). In this work, the biaxial strain is applied to tune the electronic properties of VSi2P4, and it spans a wide range of properties upon increasing the strain from a ferromagnetic metal (FMM) to SGS to a ferromagnetic semiconductor (FMS) to SGS to a ferromagnetic half-metal (FMHM). Due to broken inversion symmetry, the coexistence of ferromagnetism and piezoelectricity can be achieved in FMS VSi2P4 with the strain range of 0% to 4%. The calculated piezoelectric strain coefficients d(11) for 1%, 2% and 3% strains are 4.61 pm V-1, 4.94 pm V-1 and 5.27 pm V-1, respectively, which are greater than or close to a typical value of 5 pm V-1 for bulk piezoelectric materials. Finally, similar to VSi2P4, the coexistence of piezoelectricity and ferromagnetism can be realized by strain in the VSi2N4 monolayer. Our works show that VSi2P4 in the FMS phase with intrinsic piezoelectric properties can have potential applications in spin electronic devices.
Funding OrganizationNatural Science Foundation of Shaanxi Provincial Department of Education ; Advanced Analysis and Computation Center of China University of Mining and Technology (CUMT)
DOI10.1039/d0cp05273f
Indexed BySCI
Language英语
Funding ProjectNatural Science Foundation of Shaanxi Provincial Department of Education[19JK0809] ; Advanced Analysis and Computation Center of China University of Mining and Technology (CUMT)
WOS Research AreaChemistry ; Physics
WOS SubjectChemistry, Physical ; Physics, Atomic, Molecular & Chemical
WOS IDWOS:000603167900040
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/158934
Collection中国科学院金属研究所
Corresponding AuthorGuo, San-Dong
Affiliation1.Xian Univ Pasts & Telecommun, Sch Elect Engn, Xian 710121, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Guo, San-Dong,Mu, Wen-Qi,Zhu, Yu-Tong,et al. Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer VSi2P4[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2020,22(48):28359-28364.
APA Guo, San-Dong,Mu, Wen-Qi,Zhu, Yu-Tong,&Chen, Xing-Qiu.(2020).Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer VSi2P4.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,22(48),28359-28364.
MLA Guo, San-Dong,et al."Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer VSi2P4".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 22.48(2020):28359-28364.
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