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Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films
Han, Dan1,2; Wang, Zhenhua1,2; Gao, Xuan P. A.3; Zhang, Zhidong1,2
Corresponding AuthorWang, Zhenhua(zhwang@imr.ac.cn)
2021-01-06
Source PublicationCRYSTAL GROWTH & DESIGN
ISSN1528-7483
Volume21Issue:1Pages:608-616
AbstractThe contribution of topological insulator surface states" their transport properties can be tuned by doping, but the uniformity effect of the dopants has been ignored in previous studies. In this work, we studied the influence of the degree of uniformity on high-quality Cu, Bi2Se3 films prepared by pulsed laser deposition with a designed sequential deposition process of Bi2Se3 and Cu. It was found that with a greater uniformity of the Cu dopants a two-dimensional electron electron interaction (2D EEI) effect becomes more evident below 25 similar to K in the presence of weak disorder and a weak antilocalization (WAL) effect near zero magnetic field becomes more pronounced at low temperature. Furthermore, the topological surface state conduction of the Cu Bi2Se3 films Nagaoka (HLN) model analysis of the WAL effect. This research may open up new aspect properties of disordered topological insulators. [Graphics]
Funding OrganizationNational Natural Science Foundation of China ; National Basic Research Program ; Foundation of National Laboratory for Materials Science ; United Foundation of Liaoning Province ; National Laboratory for Materials Science ; Liaoning Revitalization Talents Program
DOI10.1021/acs.cgd.0c01418
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51971220] ; National Natural Science Foundation of China[52031014] ; National Basic Research Program[2017YFA0206302] ; Foundation of National Laboratory for Materials Science[L2019R31] ; United Foundation of Liaoning Province ; National Laboratory for Materials Science[2019JH3] ; Liaoning Revitalization Talents Program[XLYC1807122]
WOS Research AreaChemistry ; Crystallography ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Crystallography ; Materials Science, Multidisciplinary
WOS IDWOS:000607623900062
PublisherAMER CHEMICAL SOC
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/159130
Collection中国科学院金属研究所
Corresponding AuthorWang, Zhenhua
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
Recommended Citation
GB/T 7714
Han, Dan,Wang, Zhenhua,Gao, Xuan P. A.,et al. Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films[J]. CRYSTAL GROWTH & DESIGN,2021,21(1):608-616.
APA Han, Dan,Wang, Zhenhua,Gao, Xuan P. A.,&Zhang, Zhidong.(2021).Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films.CRYSTAL GROWTH & DESIGN,21(1),608-616.
MLA Han, Dan,et al."Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films".CRYSTAL GROWTH & DESIGN 21.1(2021):608-616.
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