| Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films | |
| Han, Dan1,2; Wang, Zhenhua1,2; Gao, Xuan P. A.3; Zhang, Zhidong1,2 | |
| 通讯作者 | Wang, Zhenhua(zhwang@imr.ac.cn) |
| 2021-01-06 | |
| 发表期刊 | CRYSTAL GROWTH & DESIGN
 |
| ISSN | 1528-7483 |
| 卷号 | 21期号:1页码:608-616 |
| 摘要 | The contribution of topological insulator surface states" their transport properties can be tuned by doping, but the uniformity effect of the dopants has been ignored in previous studies. In this work, we studied the influence of the degree of uniformity on high-quality Cu, Bi2Se3 films prepared by pulsed laser deposition with a designed sequential deposition process of Bi2Se3 and Cu. It was found that with a greater uniformity of the Cu dopants a two-dimensional electron electron interaction (2D EEI) effect becomes more evident below 25 similar to K in the presence of weak disorder and a weak antilocalization (WAL) effect near zero magnetic field becomes more pronounced at low temperature. Furthermore, the topological surface state conduction of the Cu Bi2Se3 films Nagaoka (HLN) model analysis of the WAL effect. This research may open up new aspect properties of disordered topological insulators. [Graphics] |
| 资助者 | National Natural Science Foundation of China ; National Basic Research Program ; Foundation of National Laboratory for Materials Science ; United Foundation of Liaoning Province ; National Laboratory for Materials Science ; Liaoning Revitalization Talents Program |
| DOI | 10.1021/acs.cgd.0c01418 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[51971220] ; National Natural Science Foundation of China[52031014] ; National Basic Research Program[2017YFA0206302] ; Foundation of National Laboratory for Materials Science[L2019R31] ; United Foundation of Liaoning Province ; National Laboratory for Materials Science[2019JH3] ; Liaoning Revitalization Talents Program[XLYC1807122] |
| WOS研究方向 | Chemistry ; Crystallography ; Materials Science |
| WOS类目 | Chemistry, Multidisciplinary ; Crystallography ; Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000607623900062 |
| 出版者 | AMER CHEMICAL SOC |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/159130 |
| 专题 | 中国科学院金属研究所 |
| 通讯作者 | Wang, Zhenhua |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA |
| 推荐引用方式 GB/T 7714 | Han, Dan,Wang, Zhenhua,Gao, Xuan P. A.,et al. Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films[J]. CRYSTAL GROWTH & DESIGN,2021,21(1):608-616. |
| APA | Han, Dan,Wang, Zhenhua,Gao, Xuan P. A.,&Zhang, Zhidong.(2021).Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films.CRYSTAL GROWTH & DESIGN,21(1),608-616. |
| MLA | Han, Dan,et al."Influence of Dopant Uniformity on Electron Transportin CuxBi2Se3 Films".CRYSTAL GROWTH & DESIGN 21.1(2021):608-616. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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