| Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges | |
| Zhao,Siwen1,2; Li,Xiaoxi3,4; Dong,Baojuan5,6; Wang,Huide1; Wang,Hanwen3,4; Zhang,Yupeng1; Han,Zheng5,6; Zhang,Han1 | |
| Corresponding Author | Zhao,Siwen() ; Han,Zheng() ; Zhang,Han() |
| 2021-02-01 | |
| Source Publication | Reports on Progress in Physics
 |
| ISSN | 0034-4885 |
| Volume | 84Issue:2 |
| Abstract | AbstractRecently, the emerging conceptual valley-related devices have attracted much attention due to the progress on generating, controlling, and detecting the valley degree of freedom in the transition metal dichalcogenide (TMD) monolayers. In general, it is known that achieving valley degree of freedom with long valley lifetime is crucial in the implementation of valleytronic devices. Here, we provide a brief introduction of the basic understandings of valley degree of freedom. We as well review the recent experimental advancement in the modulation of valley degree of freedom. The strategies include optical/magnetic/electric field tuning, moiré patterns, plasmonic metasurface, defects and strain engineering. In addition, we summarize the corresponding mechanisms, which can help to obtain large degree of polarization and long valley lifetimes in monolayer TMDs. Based on these methods, two-dimensional valley-optoelectronic systems based on TMD heterostructures can be constructed, providing opportunities for such as the new paradigm in data processing and transmission. Challenges and perspectives on the development of valleytronics are highlighted as well. |
| Keyword | valleytronics transition metal dichalcogenides (TMDs) optoelectronic devices hybrid heterostructures |
| DOI | 10.1088/1361-6633/abdb98 |
| Language | en |
| WOS ID | IOP:0034-4885-84-2-abdb98 |
| Publisher | IOP Publishing |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/159379 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhao,Siwen; Han,Zheng; Zhang,Han |
| Affiliation | 1.Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People’s Republic of China 2.College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, People’s Republic of China 3.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People’s Republic of China 4.School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, People’s Republic of China 5.State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, People’s Republic of China 6.Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People’s Republic of China |
| Recommended Citation GB/T 7714 | Zhao,Siwen,Li,Xiaoxi,Dong,Baojuan,et al. Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges[J]. Reports on Progress in Physics,2021,84(2). |
| APA | Zhao,Siwen.,Li,Xiaoxi.,Dong,Baojuan.,Wang,Huide.,Wang,Hanwen.,...&Zhang,Han.(2021).Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges.Reports on Progress in Physics,84(2). |
| MLA | Zhao,Siwen,et al."Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges".Reports on Progress in Physics 84.2(2021). |
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