An ultrasensitive molybdenum-based double-heterojunction phototransistor

doi:10.1038/s41467-021-24397-x

IMR OpenIR

	An ultrasensitive molybdenum-based double-heterojunction phototransistor
	Feng, Shun 1,2; Liu, Chi 1; Zhu, Qianbing 1,3; Su, Xin 4; Qian, Wangwang 1,3; Sun, Yun 1; Wang, Chengxu 1,3; Li, Bo 1,3; Chen, Maolin 1,3; Chen, Long 1; Chen, Wei 1,3; Zhang, Lili 1; Zhen, Chao 1; Wang, Feijiu 5; Ren, Wencai 1,3; Yin, Lichang 1,3; Wang, Xiaomu 4; Cheng, Hui-Ming 1,3,6; Sun, Dong-Ming 1,3
通讯作者	Yin, Lichang(lcyin@imr.ac.cn) ; Wang, Xiaomu(xiaomu.wang@nju.edu.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn)
	2021-07-02
发表期刊	NATURE COMMUNICATIONS
ISSN	2041-1723
卷号	12 期号:1 页码:8
摘要	Two-dimensional (2D) materials are promising for next-generation photo detection because of their exceptional properties such as a strong interaction with light, electronic and optical properties that depend on the number of layers, and the ability to form hybrid structures. However, the intrinsic detection ability of 2D material-based photodetectors is low due to their atomic thickness. Photogating is widely used to improve the responsivity of devices, which usually generates large noise current, resulting in limited detectivity. Here, we report a molybdenum-based phototransistor with MoS2 channel and alpha -MoO3-x contact electrodes. The device works in a photo-induced barrier-lowering (PIBL) mechanism and its double heterojunctions between the channel and the electrodes can provide positive feedback to each other. As a result, a detectivity of 9.8x10(16)cm Hz(1/2) W-1 has been achieved. The proposed double heterojunction PIBL mechanism adds to the techniques available for the fabrication of 2D material-based phototransistors with an ultrahigh photosensitivity. Here, the authors exploit a photo-induced barrier-lowering mechanism in MoS2/ alpha -MoO3-x heterojunctions to realize two-dimensional phototransistors with enhanced performance and fast response at low bias voltage.
资助者	National Natural Science Foundation of China ; Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; Liaoning Revitalization Talents Program ; Thousand Talent Program for Young Outstanding Scientists ; National Key Research and Development Program of China ; Shandong Natural Science Foundation of China ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences
DOI	10.1038/s41467-021-24397-x
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51272256] ; National Natural Science Foundation of China[61422406] ; National Natural Science Foundation of China[61574143] ; National Natural Science Foundation of China[51532008] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[51502304] ; National Natural Science Foundation of China[51972312] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Liaoning Revitalization Talents Program[XLYC1807109] ; Thousand Talent Program for Young Outstanding Scientists ; National Key Research and Development Program of China[2016YFB0401104] ; Shandong Natural Science Foundation of China[ZR2019ZD49] ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences[L2019F28] ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences[SKLA-2019-03]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000672164300007
出版者	NATURE RESEARCH
引用统计	被引频次：39[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/159973
专题	中国科学院金属研究所
通讯作者	Yin, Lichang; Wang, Xiaomu; Cheng, Hui-Ming; Sun, Dong-Ming
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei, Peoples R China 4.Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct,Sch Phys, Nanjing, Peoples R China 5.Henan Univ, Henan Key Lab Photovolta Mat, Kaifeng, Peoples R China 6.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen, Peoples R China
推荐引用方式 GB/T 7714	Feng, Shun,Liu, Chi,Zhu, Qianbing,et al. An ultrasensitive molybdenum-based double-heterojunction phototransistor[J]. NATURE COMMUNICATIONS,2021,12(1):8.
APA	Feng, Shun.,Liu, Chi.,Zhu, Qianbing.,Su, Xin.,Qian, Wangwang.,...&Sun, Dong-Ming.(2021).An ultrasensitive molybdenum-based double-heterojunction phototransistor.NATURE COMMUNICATIONS,12(1),8.
MLA	Feng, Shun,et al."An ultrasensitive molybdenum-based double-heterojunction phototransistor".NATURE COMMUNICATIONS 12.1(2021):8.