Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer

doi:10.1016/j.apsusc.2021.149167

IMR OpenIR

	Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer
	Xin, Fangqing 1; You, Caiyin 1; Fu, Huarui 1; Hu, Yifeng 2; Ma, Li 1; Tian, Na 1; Cheng, Zhenxiang 3; Wang, Xiaohui 4; Dou, Pengwei 5; Zhang, Jingyan 5; Wang, Shouguo 5
通讯作者	You, Caiyin(caiyinyou@xaut.edu.cn)
	2021-04-30
发表期刊	APPLIED SURFACE SCIENCE
ISSN	0169-4332
卷号	546 页码:8
摘要	Flexible magnetic films have been widely investigated as a potential sensor to detect the stress or strain induced by bending. Nevertheless, the stable magnetic response is highly required in the case of wearable devices in which the bending-induced sensitivity variation should be minimized. Therefore, it is highly worthwhile to propose an approach to design a flexible magnetic film in need. Here, a flexible magnetic thin film of the potential spin gapless semiconductor CoFeMnSi (CFMS) is fabricated on an aluminum foil (Al foil), which is sensitive to the stress or strain induced under bending; but it was found that inserting a Ti3C2 MXene buffer layer, which acts as a sponge-like behavior, can significantly improve the magnetic response stability inert of the stress or strain. Impressively, the H-c can keep relatively constant under bending and the magnetic hysteresis loops remain unchanged even after repeated bending. Through the finite element calculation, we clarify the working mechanism of stress releasing by the buffer layer owing to the sponge-like elastic behavior. Our work proposes a novel approach to design flexible devices towards in need of tunable or endurable properties, and gives a theoretical instruction of selecting a buffer layer.
关键词	Flexible magnetic film Property stability Spin gapless semiconductor MXene Ti3C2 Bending
资助者	National Natural Science Foundation of China ; ISF-NSFC joint research program ; Shaanxi Natural Science Basic Research Plan
DOI	10.1016/j.apsusc.2021.149167
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51771145] ; National Natural Science Foundation of China[51625101] ; ISF-NSFC joint research program[51961145305] ; ISF-NSFC joint research program[3373/19] ; Shaanxi Natural Science Basic Research Plan[2020JM-464]
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000620785300002
出版者	ELSEVIER
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/161145
专题	中国科学院金属研究所
通讯作者	You, Caiyin
作者单位	1.Xian Univ Technol, Sch Mat Sci & Engn, Xian 710048, Peoples R China 2.Xian Univ Technol, Sch Civil Engn & Architecture, Xian 710048, Peoples R China 3.Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2500, Australia 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 5.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Xin, Fangqing,You, Caiyin,Fu, Huarui,et al. Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer[J]. APPLIED SURFACE SCIENCE,2021,546:8.
APA	Xin, Fangqing.,You, Caiyin.,Fu, Huarui.,Hu, Yifeng.,Ma, Li.,...&Wang, Shouguo.(2021).Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer.APPLIED SURFACE SCIENCE,546,8.
MLA	Xin, Fangqing,et al."Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer".APPLIED SURFACE SCIENCE 546(2021):8.