| Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics | |
| Khan, Usman1,2; Tang, Lei1,2; Ding, Baofu1,2; Yuting, Luo1,2; Feng, Simin1,2; Chen, Wenjun1,2; Khan, Muhammad Jahangir1,2; Liu, Bilu1,2; Cheng, Hui-Ming1,2,3 | |
| Corresponding Author | Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn) |
| 2021-04-28 | |
| Source Publication | ADVANCED FUNCTIONAL MATERIALS
 |
| ISSN | 1616-301X |
| Pages | 7 |
| Abstract | 1D materials have attracted significant research interest due to their unique quantum confinement effects and edge-related properties. Atomically thin 1D nanoribbons are particularly interesting because it is a valuable platform with the physical limits of both thickness and width. Here, a catalyst-free growth method is developed and the growth of Bi2O2Se nanostructures with tunable dimensionality is achieved. Significantly, Bi2O2Se nanoribbons with a thickness down to 0.65 nm, corresponding to a monolayer, are successfully grown for the first time. Electrical and optoelectronic measurements show that Bi2O2Se nanoribbons possess decent performance in terms of mobility, on/off ratio, and photoresponsivity, suggesting their promise for devices. This work not only reports a new method for the growth of atomically thin nanoribbons but also provides a platform to study properties and applications of such nanoribbon materials at a thickness limit. |
| Keyword | Bi O-2 Se-2 catalyst‐ free growth chemical vapor deposition field‐ effect transistor monolayer nanoribbons photodetectors |
| Funding Organization | National Natural Science Foundation of China ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen ; Shenzhen Basic Research Project |
| DOI | 10.1002/adfm.202101170 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51950410577] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Project[JCYJ20200109144620815] ; Shenzhen Basic Research Project[JCYJ20190809180605522] ; Shenzhen Basic Research Project[JCYJ20200109144616617] |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000644764500001 |
| Publisher | WILEY-V C H VERLAG GMBH |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/161976 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Liu, Bilu; Cheng, Hui-Ming |
| Affiliation | 1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Inst Mat Res, Shenzhen 518055, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Khan, Usman,Tang, Lei,Ding, Baofu,et al. Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics[J]. ADVANCED FUNCTIONAL MATERIALS,2021:7. |
| APA | Khan, Usman.,Tang, Lei.,Ding, Baofu.,Yuting, Luo.,Feng, Simin.,...&Cheng, Hui-Ming.(2021).Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics.ADVANCED FUNCTIONAL MATERIALS,7. |
| MLA | Khan, Usman,et al."Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics".ADVANCED FUNCTIONAL MATERIALS (2021):7. |
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