Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics

doi:10.1002/adfm.202101170

IMR OpenIR

	Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics
	Khan, Usman 1,2; Tang, Lei 1,2; Ding, Baofu 1,2; Yuting, Luo 1,2; Feng, Simin 1,2; Chen, Wenjun 1,2; Khan, Muhammad Jahangir 1,2; Liu, Bilu 1,2; Cheng, Hui-Ming 1,2,3
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
	2021-04-28
发表期刊	ADVANCED FUNCTIONAL MATERIALS
ISSN	1616-301X
页码	7
摘要	1D materials have attracted significant research interest due to their unique quantum confinement effects and edge-related properties. Atomically thin 1D nanoribbons are particularly interesting because it is a valuable platform with the physical limits of both thickness and width. Here, a catalyst-free growth method is developed and the growth of Bi2O2Se nanostructures with tunable dimensionality is achieved. Significantly, Bi2O2Se nanoribbons with a thickness down to 0.65 nm, corresponding to a monolayer, are successfully grown for the first time. Electrical and optoelectronic measurements show that Bi2O2Se nanoribbons possess decent performance in terms of mobility, on/off ratio, and photoresponsivity, suggesting their promise for devices. This work not only reports a new method for the growth of atomically thin nanoribbons but also provides a platform to study properties and applications of such nanoribbon materials at a thickness limit.
关键词	Bi O-2 Se-2 catalyst‐ free growth chemical vapor deposition field‐ effect transistor monolayer nanoribbons photodetectors
资助者	National Natural Science Foundation of China ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen ; Shenzhen Basic Research Project
DOI	10.1002/adfm.202101170
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51950410577] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Project[JCYJ20200109144620815] ; Shenzhen Basic Research Project[JCYJ20190809180605522] ; Shenzhen Basic Research Project[JCYJ20200109144616617]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000644764500001
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：31[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/161976
专题	中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Inst Mat Res, Shenzhen 518055, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Khan, Usman,Tang, Lei,Ding, Baofu,et al. Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics[J]. ADVANCED FUNCTIONAL MATERIALS,2021:7.
APA	Khan, Usman.,Tang, Lei.,Ding, Baofu.,Yuting, Luo.,Feng, Simin.,...&Cheng, Hui-Ming.(2021).Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics.ADVANCED FUNCTIONAL MATERIALS,7.
MLA	Khan, Usman,et al."Catalyst-Free Growth of Atomically Thin Bi2O2Se Nanoribbons for High-Performance Electronics and Optoelectronics".ADVANCED FUNCTIONAL MATERIALS (2021):7.