Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films

doi:10.1016/j.apsusc.2021.149475

IMR OpenIR

	Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films
	Yu, Biao 1,2; Yang, Bing 1; Li, Haining 1,2; Lu, Jiaqi 1,2; Huang, Nan 1; Liu, Lusheng 1; Jiang, Xin 1,3
通讯作者	Yang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn)
	2021-06-30
发表期刊	APPLIED SURFACE SCIENCE
ISSN	0169-4332
卷号	552 页码:9
摘要	The effect of three different surface oxidation approaches (air annealing, acid oxidation and oxygen plasma) on microstructural evolution and silicon vacancy (SiV) photoluminescence (PL) in the nanocrystalline diamond (NCD) films is investigated. All oxidation methods lead to the bonding of oxygen functional groups at diamond surface. The SiV centers exhibit the PL enhancement of about 105-fold in the air-annealed sample, compared with the as-deposited films. Nevertheless, the PL enhancement is about 7-fold and 2-fold in the acid- and plasma-treated samples, respectively. Combination of Raman spectra, HRTEM imaging with cross-sectional oxygen mapping confirms that such different PL behavior originates from the formed different thick oxidation layers. The air oxidation results in a thicker oxidation layer with improved crystallinity than the other two methods. In addition, when the air-annealed films are re-terminated with hydrogen, the SiV PL emission tends to drop remarkably under the same crystallinity. It indicates that hydrogen termination leads to the PL quenching of SiV centers. Therefore, our work reveals that the direct bonding of oxygen to sp(3) carbon or the improvement of diamond crystalline quality plays an effective role in the PL enhancement of SiV centers during the oxidation of hydrogen-terminated NCD particles or films.
关键词	Color centers Photoluminescence Nano-crystalline diamond Surface oxidation
资助者	National Natural Science Foundation of China ; Liaoning Provincial Natural Science Foundation of China
DOI	10.1016/j.apsusc.2021.149475
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51872294] ; Liaoning Provincial Natural Science Foundation of China[2019-MS-331]
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000639695100001
出版者	ELSEVIER
引用统计	被引频次：12[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/162035
专题	中国科学院金属研究所
通讯作者	Yang, Bing; Jiang, Xin
作者单位	1.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Dept Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany
推荐引用方式 GB/T 7714	Yu, Biao,Yang, Bing,Li, Haining,et al. Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films[J]. APPLIED SURFACE SCIENCE,2021,552:9.
APA	Yu, Biao.,Yang, Bing.,Li, Haining.,Lu, Jiaqi.,Huang, Nan.,...&Jiang, Xin.(2021).Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films.APPLIED SURFACE SCIENCE,552,9.
MLA	Yu, Biao,et al."Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films".APPLIED SURFACE SCIENCE 552(2021):9.