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Influence of flexoelectric effects on domain switching in ferroelectric films
Zou, M. J.1,2; Tang, Y. L.3; Feng, Y. P.1,2; Geng, W. R.1,2; Ma, X. L.3,4; Zhu, Y. L.1,3
Corresponding AuthorZhu, Y. L.(ylzhu@imr.ac.cn)
2021-05-14
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume129Issue:18Pages:9
AbstractFlexoelectricity has been shown to be an effective strategy to modulate the polarization configurations, domain structures, and physical properties in nanoscale ferroelectric thin films. However, the relations between the domain switching processes and flexoelectric effects remain elusive, which is essential for the design of nanoscale ferroelectric electric devices. In this work, strain-gradient and normal PbTiO3 films are fabricated and investigated to resolve this elusive relationship. By using large-scale and local piezoelectric force microscopy characterization, the ferroelectric domain switching in strain-gradient PbTiO3 films is found to be hard and hindered under applied electric fields compared with the normal ones. Successive atomic-scale scanning transmission electron microscopy imaging analysis manifests that the domains in the strain-gradient PbTiO3 films are stabilized by an additional effective strain gradient-induced flexoelectric field, which was introduced by negative pressure originated from vertically distributed Pb-rich anti-phase domains. This study proposes an effective method to stabilize the ferroelectric polarization in nanoscale ferroelectric films, thus facilitate improving the reliability of ferroelectric electronic devices.
Funding OrganizationNational Natural Science Foundation of China (NNSFC) ; Key Research Program of Frontier Sciences CAS ; Shenyang National Laboratory for Materials Science ; Youth Innovation Promotion Association CAS
DOI10.1063/5.0048535
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China (NNSFC)[51971223] ; National Natural Science Foundation of China (NNSFC)[51922100] ; Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; Shenyang National Laboratory for Materials Science[L2019R06] ; Shenyang National Laboratory for Materials Science[L2019R08] ; Shenyang National Laboratory for Materials Science[L2019F01] ; Shenyang National Laboratory for Materials Science[L2019F13] ; Youth Innovation Promotion Association CAS[2016177]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000692768700001
PublisherAIP Publishing
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/166882
Collection中国科学院金属研究所
Corresponding AuthorZhu, Y. L.
Affiliation1.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
2.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
3.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Wenhua Rd 72, Shenyang 110016, Peoples R China
4.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Peoples R China
Recommended Citation
GB/T 7714
Zou, M. J.,Tang, Y. L.,Feng, Y. P.,et al. Influence of flexoelectric effects on domain switching in ferroelectric films[J]. JOURNAL OF APPLIED PHYSICS,2021,129(18):9.
APA Zou, M. J.,Tang, Y. L.,Feng, Y. P.,Geng, W. R.,Ma, X. L.,&Zhu, Y. L..(2021).Influence of flexoelectric effects on domain switching in ferroelectric films.JOURNAL OF APPLIED PHYSICS,129(18),9.
MLA Zou, M. J.,et al."Influence of flexoelectric effects on domain switching in ferroelectric films".JOURNAL OF APPLIED PHYSICS 129.18(2021):9.
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