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Enhanced Spin-Orbit Torque and Low Critical Current Density in aPt(100-X)Ru(X)/[CoNi]/Ru Multilayer for Spintronic Devices
Ju, Hongzhan1,2; Zhao, Xiaotian1; Liu, Wei1; Song, Yuhang1,2; Liu, Long1,2; Ma, Jun1,2; Li, Yang1,2; Wu, Jinxiang1,2; Zhang, Zhidong1
Corresponding AuthorLiu, Wei(wliu@imr.ac.cn)
2021-12-14
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Pages9
AbstractUsing a heavy-metal (HM) alloy layer in spin-orbit torque (SOT)based devices is an effective method for obtaining a high current-spin conversion efficiency OSH. In this work, SOT-based spintronic devices with a Pt100-xRux-alloyed HM layer are studied by applying harmonic Hall measurements and magneto-optical Kerr effect microscopy to detect the OSH and to observe the process of current-induced magnetization switching. Both the highest OSH of 0.132 and the lowest critical current density (Jc) of 8 x 105 A/cm2 are realized in a device with x = 20, which satisfies the high SOT efficiency and low energy consumption simultaneously. The interfacial Dzyaloshinskii-Moriya interaction can be overcome by increasing the in-plane assist field. Meanwhile, the minimum in-plane field required for current-induced complete switching can be reduced to +/- 60 Oe. Our study reveals that using the Pt-Ru alloyed HM layer is an effective route for SOT application with enhanced performance.
Keywordalloyed heavy metal spin-orbit torque current-induced magnetization switching domain wall movements spin Hall effect
Funding OrganizationState Key Project of Research and Development of China ; National Natural Science Foundation of China
DOI10.1021/acsami.1c17653
Indexed BySCI
Language英语
Funding ProjectState Key Project of Research and Development of China[2017YFA0206302] ; National Natural Science Foundation of China[52031014] ; National Natural Science Foundation of China[51771198] ; National Natural Science Foundation of China[51971219] ; National Natural Science Foundation of China[51801212]
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000731994000001
PublisherAMER CHEMICAL SOC
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Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/167259
Collection中国科学院金属研究所
Corresponding AuthorLiu, Wei
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Ju, Hongzhan,Zhao, Xiaotian,Liu, Wei,et al. Enhanced Spin-Orbit Torque and Low Critical Current Density in aPt(100-X)Ru(X)/[CoNi]/Ru Multilayer for Spintronic Devices[J]. ACS APPLIED MATERIALS & INTERFACES,2021:9.
APA Ju, Hongzhan.,Zhao, Xiaotian.,Liu, Wei.,Song, Yuhang.,Liu, Long.,...&Zhang, Zhidong.(2021).Enhanced Spin-Orbit Torque and Low Critical Current Density in aPt(100-X)Ru(X)/[CoNi]/Ru Multilayer for Spintronic Devices.ACS APPLIED MATERIALS & INTERFACES,9.
MLA Ju, Hongzhan,et al."Enhanced Spin-Orbit Torque and Low Critical Current Density in aPt(100-X)Ru(X)/[CoNi]/Ru Multilayer for Spintronic Devices".ACS APPLIED MATERIALS & INTERFACES (2021):9.
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