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泡沫SiC表面纳米多孔Al2O3涂层的制备
其他题名Fabrication of nano-porous alumina film on the surface of SiC foam
聂杰
学位类型硕士
导师杨永进
2007-06-09
学位授予单位中国科学院金属研究所
学位授予地点金属研究所
学位专业材料加工工程
关键词Sic泡沫 结构催化剂载体 涂层 电泳沉积 烧结 阳极氧化 比表面积
摘要泡沫SiC具有一系列优良的性能,如高强度、耐高温、耐磨、耐腐蚀、抗氧化、高导热系数、低热膨胀率、良好的抗震性和化学稳定性,是一种理想的结构催化剂载体材料。为了提高泡沫SiC的比表面积,本文通过采用电泳沉积、真空烧结的方法在泡沫碳化硅(SiC)上得到整体的铝膜,再经阳极氧化处理,在泡沫SiC表面获得纳米多孔Al2O3薄膜。同时对铝膜的电泳沉积过程、烧结过程进行了研究,并对阳极氧化制备纳米多孔Al2O3薄膜工艺进行了初步探讨。主要研究结果如下: 对泡沫SiC的电泳沉积过程研究结果表明:(1)悬浮液最佳配比为无水乙醇(Ethanol)+3g/L聚乙烯醇缩丁醛(PVB)+3g/L磷酸二异辛酯(PE)+ 0.6 wt%Al;(2)为了得到较好的膜层,优化的电泳参数工艺为:电流为6mA(恒定),电场为30~150V/cm,时间为1~5min;(3)在限制性边界流场装置中,能较好的解决泡沫SiC里层和外层膜层不均的问题。 对电泳沉积后铝膜的烧结行为研究表明:(1)当烧结气氛分别为真空和氩气(Ar)保护气氛时,铝膜表现出不同的烧结行为,前者产生整体的铝膜,而后者产生氧化铝纤维,为了有利于后续的阳极氧化处理,应将烧结过程在真空中进行;(2)为了使铝粉颗粒熔化,获得致密的铝膜,同时形成Al-Si合金增强涂层与基体的结合力,应将烧结温度控制在960~1000℃之间;(3)通过碱液(NaOH)浸泡的方法可以适当调节基体表层的Si含量,从而达到控制铝膜层中硅含量。 对铝膜阳极氧化研究结果表明:(1)阳极氧化可以在泡沫SiC表面获得纳米多孔阳极氧化膜,其平均孔径约为18nm,密度约为7×1010/cm2,孔的存在显著地提高了膜层的比表面积;(2)氧化电压是生成多孔型膜的关键因素,只有当氧化电压超过产生多孔型膜的临界电压,阳极氧化生成多孔型氧化膜,反之则生成壁垒型氧化膜,在烧结后的泡沫SiC/Al膜上,临界电压在30~40V之间。
其他摘要Silicon carbide (SiC) foam is an ideal monolith catalyst carrier material for excellent properties such as high strength, high temperature resistance, wear resistance, corrosion resistance, oxidation resistance, high heat transfer coefficient, low thermal expansion factor, good thermal shock resistance and chemical inert. In order to improve the specific surface area, the aluminum film was prepared on the surface of silicon carbide (SiC) ceramic foam by electrophoretic technique and vacuum sintering. After anodic oxidation of the aluminum film, the porous alumina film was obtained on the surface of SiC ceramic foam. The effects of parameters of electrophoretic deposition, sintering and anodic oxidation processes on the final alumina film were investigated. The main results are as follows: The investigation of electrophoretic deposition process shows: (1) the optimized composition of suspension was ethanol + 3g/L PVB + 3g/L PE+0.6wt% Al; (2) in order to achieve a good aluminum film, the optimized electrophoresis parameters are the current 6mA, electrical field strength less than 150/cm, deposition time less than 5min; (3) the non-uniform phenomenon of the aluminum film can be avoided when the deposition processes were conducted in a device with boundary limited flow field. The researches of the sintering behavior of aluminum film indicate that: (1) the integral aluminum film and the alumina fiber were detected respectively when the samples were sintered in the vacuum and argon atmosphere. Hence, the vacuum sintering should be chosen for the subsequent anodic oxidation treatment; (2) the sintering temperature should be controlled at 960~1000℃ with the aim to improve the interface between aluminum film and silicon carbide and to obtain high quality aluminum film; (3) NaOH solution treatment can be used for adjusting Si content on the surface of strut of SiC foam and consequently controlling the silicon content in aluminum films. The investigations of anodic oxidation of aluminum film reveal that: (1) the porous alumina film with 18nm pore diameter and 7×1010/cm2 pore density could be prepared by anodic oxidation, and the specific surface area of SiC foam can be enlarged by a factor of seven; (2) the anodic oxidation voltage is a critical factor to determine the shape of anodic alumina film, porous-type film and barrier-type film can be respectively obtained when the voltage is higher or lower than the critical value. In this experiment, the critical voltage value is between 30~40V.
页数80
语种中文
文献类型学位论文
条目标识符http://ir.imr.ac.cn/handle/321006/17090
专题中国科学院金属研究所
推荐引用方式
GB/T 7714
聂杰. 泡沫SiC表面纳米多孔Al2O3涂层的制备[D]. 金属研究所. 中国科学院金属研究所,2007.
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