The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films

doi:10.1016/j.jmst.2021.07.025

IMR OpenIR

	The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films
	Feng, Dingshuai 1,2; Huang, Biaohong 1,2; Li, Lingli 1,2; Li, Xiaoqi 1,2; Gu, Youdi 1; Hu, Weijin 1; Zhang, Zhidong 1
通讯作者	Hu, Weijin(wjhu@imr.ac.cn)
	2022-04-20
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	106 页码:49-55
摘要	Nowadays, photovoltaic effect has been widely studied in various ferroelectric materials due to its applications as optoelectronic devices. In this work, with BiFeO3 (BFO) films as the photovoltaic materials, we report the effects of Eu3+ doping content on the phase structure, ferroelectric and optical properties of BFO films grown on Ca0.96Ce0.04MnO3/YAlO3 (001) substrate. We found that a small doping level of 0.05 could induce a phase change of BFO from tetragonal to rhombohedral, due to the shrinking of the lattice upon Eu3+ doping and the breaking of surface terrace structure induced by Ca0.96Ce0.04MnO3 layer. This results in a sharp band gap reduction from 3.30 eV to 2.60 eV, and a decrease in the coercivity of ferroelectric polarization switching. Based on these findings, we investigate the photovoltaic effects of ITO/EuxBi1-xFeO3/Ca0.96Ce0.04MnO3 vertical capacitors. It is found that the short-circuit current density (J(sc)) decreases with increasing Eu3+ doping, whereas the open-circuit voltage (V-oc) first increases to a level of 0.1 V and then decreases with further Eu3+ doping. This could be explained by the combined effect of Schottky-junction and depolarization field on the photovoltaic process. Our research suggests that a moderate Eu3+ doping is helpful for enhancing the photovoltaic effect of BFO thin film devices. (C) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
关键词	Ferroelectric Photovoltaic effect BiFeO3 Eu3+ doping Band gap
资助者	National Natural Science Foun-dation of China
DOI	10.1016/j.jmst.2021.07.025
收录类别	SCI
语种	英语
资助项目	National Natural Science Foun-dation of China[61974147] ; National Natural Science Foun-dation of China[52031014]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000780060300007
出版者	JOURNAL MATER SCI TECHNOL
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/172976
专题	中国科学院金属研究所
通讯作者	Hu, Weijin
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Feng, Dingshuai,Huang, Biaohong,Li, Lingli,et al. The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,106:49-55.
APA	Feng, Dingshuai.,Huang, Biaohong.,Li, Lingli.,Li, Xiaoqi.,Gu, Youdi.,...&Zhang, Zhidong.(2022).The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,106,49-55.
MLA	Feng, Dingshuai,et al."The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 106(2022):49-55.