Microstructural evolution and growth kinetics of interfacial reaction layers in SUS430/Ti3SiC2 diffusion bonded joints using a Ni interlayer | |
Cheng, Qiang1; Zheng, LiLi2; Li, XiChao3; Xu, Bin4,5; Sun, MingYue4,5; Shi, Jing1; Dai, ZuoQiang2; Zhang, TieZhu2; Zhang, HongXin2 | |
通讯作者 | Zheng, LiLi(llzhengqdu@163.com) ; Xu, Bin(bxu@imr.ac.cn) ; Shi, Jing(shijing@ouc.edu.cn) |
2022-02-15 | |
发表期刊 | CERAMICS INTERNATIONAL
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ISSN | 0272-8842 |
卷号 | 48期号:4页码:4484-4496 |
摘要 | Ti3SiC2 ceramic and SUS430 stainless steel (SS) were successfully joined by a solid diffusion bonding technique using Ni interlayers. Diffusion bonding was performed in the temperature range of 850 degrees C-1100 degrees C under vacuum. The interfacial reaction phase, morphology evolution, growth kinetics and tensile strength were sys-tematically investigated. In all cases, the inter-diffusion and reaction between Ti3SiC2 and SS can be effectively prevented by Ni foil, and the good transition in the joint benefit to the sound joining. The interface in the joints adjacent to SS matrix was composed of gamma solid solution and a small amount of sigma intermetallic compound. The compounds in the Ni/Ti3SiC2 interface was Ni/Ni(Si)/Ni31Si12 + Ni16Ti6Si7 + Ti3SiC2 + TiCx/Ti2Ni + Ti3SiC2 + TiCx/Ti3SiC2, which formed by the inter-diffusion and chemical reactions between Si and Ni atoms. The diffusion mechanism and reaction mechanism were interrelated, and decided the width of each reaction zones. Further-more, the diffusion activation energy was 113 kJ/mol. The tensile strength increases with increasing the bonding temperature. The minimum and maximum strength of 32.3 MPa and 88.8 MPa were obtained from SUS430/Ni/ Ti3SiC2 joints, which bonding experiments were carried out at 850 degrees C and 1100 degrees C, respectively. |
关键词 | Solid diffusion bonding Ti3SiC2 ceramic SUS430 Interfacial microstructure Growth kinetics |
资助者 | National Key Research and Develop-ment Program of China ; National Natural Science Foundation of China ; National Science and Technology Major Project of China ; Natural Science Foundation of Shandong Province |
DOI | 10.1016/j.ceramint.2021.10.234 |
收录类别 | SCI |
语种 | 英语 |
资助项目 | National Key Research and Develop-ment Program of China[2018YFA0702900] ; National Natural Science Foundation of China[52001179] ; National Natural Science Foundation of China[51774265] ; National Science and Technology Major Project of China[2019ZX06004010] ; Natural Science Foundation of Shandong Province[ZR2020ME019] ; Natural Science Foundation of Shandong Province[ZR201709240128] |
WOS研究方向 | Materials Science |
WOS类目 | Materials Science, Ceramics |
WOS记录号 | WOS:000744048000001 |
出版者 | ELSEVIER SCI LTD |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/173701 |
专题 | 中国科学院金属研究所 |
通讯作者 | Zheng, LiLi; Xu, Bin; Shi, Jing |
作者单位 | 1.Ocean Univ China, Sch Mat Sci & Engn, Qingdao 266100, Peoples R China 2.Qingdao Univ, Coll Mech & Elect Engn, Natl Engn Res Ctr Intelligent Elect Vehicle Power, Qingdao 266071, Peoples R China 3.CRRC Qingdao Sifang Rolling Stock Res Inst Co Ltd, Energy Storage Business Dept, Qingdao 266031, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Key Lab Nucl Mat & Safety Assessment, Shenyang 110016, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
推荐引用方式 GB/T 7714 | Cheng, Qiang,Zheng, LiLi,Li, XiChao,et al. Microstructural evolution and growth kinetics of interfacial reaction layers in SUS430/Ti3SiC2 diffusion bonded joints using a Ni interlayer[J]. CERAMICS INTERNATIONAL,2022,48(4):4484-4496. |
APA | Cheng, Qiang.,Zheng, LiLi.,Li, XiChao.,Xu, Bin.,Sun, MingYue.,...&Zhang, HongXin.(2022).Microstructural evolution and growth kinetics of interfacial reaction layers in SUS430/Ti3SiC2 diffusion bonded joints using a Ni interlayer.CERAMICS INTERNATIONAL,48(4),4484-4496. |
MLA | Cheng, Qiang,et al."Microstructural evolution and growth kinetics of interfacial reaction layers in SUS430/Ti3SiC2 diffusion bonded joints using a Ni interlayer".CERAMICS INTERNATIONAL 48.4(2022):4484-4496. |
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