| Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory | |
| Huang, Biaohong1,2; Xie, Zhongshuai3; Feng, Dingshuai1,2; Li, Lingli1,2; Li, Xiaoqi1,2; Paudel, Tula R.4; Han, Zheng1; Hu, Weijin1; Yuan, Guoliang3; Wu, Tom5; Zhang, Zhidong1 | |
| Corresponding Author | Paudel, Tula R.(Tula.Paudel@sdsmt.edu) ; Hu, Weijin(wjhu@imr.ac.cn) |
| 2021-12-30 | |
| Source Publication | ADVANCED ELECTRONIC MATERIALS
 |
| ISSN | 2199-160X |
| Pages | 10 |
| Abstract | Ferroelectric (FE) resistive switching has attracted considerable interest as a promising candidate for applications in non-volatile memory technology. In this work, via judiciously controlling the defect states of oxygen vacancy through Sm-doping, the authors obtain multiple current jumps/discrete resistance states in the resistive switching memories based on a model FE BiFeO3 (BFO). These hitherto unreported current jumps are attributed to the space-charge-limited current correlated with electron trapping by oxygen vacancies in the BFO film. Concurrently, oxygen vacancies serve as the pinning centers for the FE domains, leading to the domain wall creep behavior. These results illustrate the strong interplay between the defect, resistive switching, and domain wall creep behavior in FE diodes, providing a new insight into the mechanism of FE resistive switching. Overall, the large on/off ratio of approximate to 5 x 10(5), multiple resistance states, and fast switching speed of approximate to 30 ns, promise their potential applications in multi-level data storage memories. |
| Keyword | BiFeO3 current jump domain wall creep ferroelectric resistive switching oxygen vacancy space-charge-limited current |
| Funding Organization | National Science Foundation of China |
| DOI | 10.1002/aelm.202101059 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Science Foundation of China[51790492] |
| WOS Research Area | Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000736435800001 |
| Publisher | WILEY |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/173826 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Paudel, Tula R.; Hu, Weijin |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, IMR,CAS, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China USTC, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Peoples R China 4.South Dakota Sch Mines & Technol, Dept Phys, Rapid City, SD 57701 USA 5.Univ New South Wales UNSW, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia |
| Recommended Citation GB/T 7714 | Huang, Biaohong,Xie, Zhongshuai,Feng, Dingshuai,et al. Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory[J]. ADVANCED ELECTRONIC MATERIALS,2021:10. |
| APA | Huang, Biaohong.,Xie, Zhongshuai.,Feng, Dingshuai.,Li, Lingli.,Li, Xiaoqi.,...&Zhang, Zhidong.(2021).Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory.ADVANCED ELECTRONIC MATERIALS,10. |
| MLA | Huang, Biaohong,et al."Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory".ADVANCED ELECTRONIC MATERIALS (2021):10. |
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