Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory

doi:10.1002/aelm.202101059

IMR OpenIR

	Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory
	Huang, Biaohong 1,2; Xie, Zhongshuai 3; Feng, Dingshuai 1,2; Li, Lingli 1,2; Li, Xiaoqi 1,2; Paudel, Tula R.4; Han, Zheng 1; Hu, Weijin 1; Yuan, Guoliang 3; Wu, Tom 5; Zhang, Zhidong 1
通讯作者	Paudel, Tula R.(Tula.Paudel@sdsmt.edu) ; Hu, Weijin(wjhu@imr.ac.cn)
	2021-12-30
发表期刊	ADVANCED ELECTRONIC MATERIALS
ISSN	2199-160X
页码	10
摘要	Ferroelectric (FE) resistive switching has attracted considerable interest as a promising candidate for applications in non-volatile memory technology. In this work, via judiciously controlling the defect states of oxygen vacancy through Sm-doping, the authors obtain multiple current jumps/discrete resistance states in the resistive switching memories based on a model FE BiFeO3 (BFO). These hitherto unreported current jumps are attributed to the space-charge-limited current correlated with electron trapping by oxygen vacancies in the BFO film. Concurrently, oxygen vacancies serve as the pinning centers for the FE domains, leading to the domain wall creep behavior. These results illustrate the strong interplay between the defect, resistive switching, and domain wall creep behavior in FE diodes, providing a new insight into the mechanism of FE resistive switching. Overall, the large on/off ratio of approximate to 5 x 10(5), multiple resistance states, and fast switching speed of approximate to 30 ns, promise their potential applications in multi-level data storage memories.
关键词	BiFeO3 current jump domain wall creep ferroelectric resistive switching oxygen vacancy space-charge-limited current
资助者	National Science Foundation of China
DOI	10.1002/aelm.202101059
收录类别	SCI
语种	英语
资助项目	National Science Foundation of China[51790492]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000736435800001
出版者	WILEY
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/173826
专题	中国科学院金属研究所
通讯作者	Paudel, Tula R.; Hu, Weijin
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, IMR,CAS, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China USTC, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Peoples R China 4.South Dakota Sch Mines & Technol, Dept Phys, Rapid City, SD 57701 USA 5.Univ New South Wales UNSW, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
推荐引用方式 GB/T 7714	Huang, Biaohong,Xie, Zhongshuai,Feng, Dingshuai,et al. Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory[J]. ADVANCED ELECTRONIC MATERIALS,2021:10.
APA	Huang, Biaohong.,Xie, Zhongshuai.,Feng, Dingshuai.,Li, Lingli.,Li, Xiaoqi.,...&Zhang, Zhidong.(2021).Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory.ADVANCED ELECTRONIC MATERIALS,10.
MLA	Huang, Biaohong,et al."Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory".ADVANCED ELECTRONIC MATERIALS (2021):10.