Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures

doi:10.1002/sstr.202000093

IMR OpenIR

	Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures
	Tan, Junyang 1,2; Li, Shisheng 3; Liu, Bilu 1,2; Cheng, Hui-Ming 1,2,4
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
	2021
发表期刊	SMALL STRUCTURES
卷号	2 期号:1 页码:20
摘要	Two-dimensional (2D) materials' family with its many members and different properties has recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D materials can be constructed into heterostructures or homostructures in the fashion of out-of-plane perpendicular stacking or in-plane lateral stitching, resulting in unexpected physical and chemical properties and applications in many areas. In particular, 2D metal-semiconductor heterostructures or homostructures (MSHSs) which integrate 2D metals and 2D semiconductors, have shown great promise in future integrated electronics and energy-related applications. Herein, MSHSs with different structures and dimensionalities are first introduced, followed by several ways for their preparation. Their applications in electronics and optoelectronics, energy storage and conversion, and their use as platforms to exploit new physics are then discussed. Finally, the perspectives about the challenges and future research directions in this emerging field are given.
关键词	2D materials electronics energy metal-semiconductor heterostructures preparation structures
资助者	National Natural Science Foundation of China ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen
DOI	10.1002/sstr.202000093
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen[201901171523]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000736588600012
出版者	WILEY
引用统计	被引频次：49[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/173839
专题	中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 3.Natl Inst Mat Sci, Int Ctr Young Scientists, Tsukuba, Ibaraki 3050044, Japan 4.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Tan, Junyang,Li, Shisheng,Liu, Bilu,et al. Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures[J]. SMALL STRUCTURES,2021,2(1):20.
APA	Tan, Junyang,Li, Shisheng,Liu, Bilu,&Cheng, Hui-Ming.(2021).Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures.SMALL STRUCTURES,2(1),20.
MLA	Tan, Junyang,et al."Structure, Preparation, and Applications of 2D MaterialBased Metal-Semiconductor Heterostructures".SMALL STRUCTURES 2.1(2021):20.