IMR OpenIR
Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions
Gao, Zhaoqing1,3,4; Wang, Chen1; Chai, Zhenbang1,2; Chen, Yinbo3,4; Shen, Chenyu1,2; Yao, Kai1; Zhao, Ning1; Wang, Yunpeng1; Ma, Haitao1
通讯作者Wang, Yunpeng(yunpengw@dlut.edu.cn) ; Ma, Haitao(htma@dlut.edu.cn)
2022-04-15
发表期刊MATERIALS CHEMISTRY AND PHYSICS
ISSN0254-0584
卷号282页码:16
摘要The present work investigated the effect of isothermal and non-isothermal conditions on the interfacial reactions at Ga-21.5In-10Sn/Cu interfaces. Increasing the isothermal temperature from 140 to 180 ?C, the growth mechanism of CuGa2 changed from mixed mechanism (reaction control and volume diffusion) to volume diffusion mechanism. At higher reaction temperature such as 220 and 260 ?C, the growth behavior of interfacial CuGa2 was controlled by grain diffusion regime. When the reaction temperature increased from 140 to 310 ?C, the morphology and the preferred orientation degree of CuGa2 plane was weakened while phase structure and preferred orientation of CuGa(2 & nbsp;)did not change. At the same hot end temperature, the temperature gradients induced by non-isothermal environment had no significant influence on the morphology of interfacial CuGa2. This study can provide the important information to determine the soldering process temperature for the sol-dering of Ga-based alloys/Cu system and will guide the design of Ga-based liquid alloys/Cu conductors for the flexible and wearable electronics.
关键词Intermetallics Microstructure Temperature gradient Preferred orientation

Ga-21-5In-10Sn alloys

Interfaces
资助者National Natural Science Foundation of China
DOI10.1016/j.matchemphys.2022.125960
收录类别SCI
语种英语
资助项目National Natural Science Foundation of China[51871040]
WOS研究方向Materials Science
WOS类目Materials Science, Multidisciplinary
WOS记录号WOS:000793040500001
出版者ELSEVIER SCIENCE SA
引用统计
被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/173933
专题中国科学院金属研究所
通讯作者Wang, Yunpeng; Ma, Haitao
作者单位1.Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
2.Tokyo Inst Technol, Dept Mat Sci & Engn, Tokyo 1528552, Japan
3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
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Gao, Zhaoqing,Wang, Chen,Chai, Zhenbang,et al. Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions[J]. MATERIALS CHEMISTRY AND PHYSICS,2022,282:16.
APA Gao, Zhaoqing.,Wang, Chen.,Chai, Zhenbang.,Chen, Yinbo.,Shen, Chenyu.,...&Ma, Haitao.(2022).Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions.MATERIALS CHEMISTRY AND PHYSICS,282,16.
MLA Gao, Zhaoqing,et al."Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions".MATERIALS CHEMISTRY AND PHYSICS 282(2022):16.
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