Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions | |
Gao, Zhaoqing1,3,4; Wang, Chen1; Chai, Zhenbang1,2; Chen, Yinbo3,4; Shen, Chenyu1,2; Yao, Kai1; Zhao, Ning1; Wang, Yunpeng1; Ma, Haitao1 | |
通讯作者 | Wang, Yunpeng(yunpengw@dlut.edu.cn) ; Ma, Haitao(htma@dlut.edu.cn) |
2022-04-15 | |
发表期刊 | MATERIALS CHEMISTRY AND PHYSICS
![]() |
ISSN | 0254-0584 |
卷号 | 282页码:16 |
摘要 | The present work investigated the effect of isothermal and non-isothermal conditions on the interfacial reactions at Ga-21.5In-10Sn/Cu interfaces. Increasing the isothermal temperature from 140 to 180 ?C, the growth mechanism of CuGa2 changed from mixed mechanism (reaction control and volume diffusion) to volume diffusion mechanism. At higher reaction temperature such as 220 and 260 ?C, the growth behavior of interfacial CuGa2 was controlled by grain diffusion regime. When the reaction temperature increased from 140 to 310 ?C, the morphology and the preferred orientation degree of CuGa2 plane was weakened while phase structure and preferred orientation of CuGa(2 & nbsp;)did not change. At the same hot end temperature, the temperature gradients induced by non-isothermal environment had no significant influence on the morphology of interfacial CuGa2. This study can provide the important information to determine the soldering process temperature for the sol-dering of Ga-based alloys/Cu system and will guide the design of Ga-based liquid alloys/Cu conductors for the flexible and wearable electronics. |
关键词 | Intermetallics
Microstructure
Temperature gradient
Preferred orientation
Ga-21-5In-10Sn alloys Interfaces |
资助者 | National Natural Science Foundation of China |
DOI | 10.1016/j.matchemphys.2022.125960 |
收录类别 | SCI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[51871040] |
WOS研究方向 | Materials Science |
WOS类目 | Materials Science, Multidisciplinary |
WOS记录号 | WOS:000793040500001 |
出版者 | ELSEVIER SCIENCE SA |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/173933 |
专题 | 中国科学院金属研究所 |
通讯作者 | Wang, Yunpeng; Ma, Haitao |
作者单位 | 1.Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China 2.Tokyo Inst Technol, Dept Mat Sci & Engn, Tokyo 1528552, Japan 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
推荐引用方式 GB/T 7714 | Gao, Zhaoqing,Wang, Chen,Chai, Zhenbang,et al. Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions[J]. MATERIALS CHEMISTRY AND PHYSICS,2022,282:16. |
APA | Gao, Zhaoqing.,Wang, Chen.,Chai, Zhenbang.,Chen, Yinbo.,Shen, Chenyu.,...&Ma, Haitao.(2022).Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions.MATERIALS CHEMISTRY AND PHYSICS,282,16. |
MLA | Gao, Zhaoqing,et al."Interfacial reactions at Ga-21.5In-10Sn/Cu liquid-solid interfaces under isothermal and non-isothermal conditions".MATERIALS CHEMISTRY AND PHYSICS 282(2022):16. |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论