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High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer
Jiang, Haiyan1,2; Li, Bo1,2; Wei, Yuning1,2; Feng, Shun1; Di, Zengfeng3; Xue, Zhongying3; Sun, Dongming1,2; Liu, Chi1,2
Corresponding AuthorXue, Zhongying(simsnow@mail.sim.ac.cn) ; Sun, Dongming(dmsun@imr.ac.cn) ; Liu, Chi(chiliu@imr.ac.cn)
2022-08-20
Source PublicationNANOTECHNOLOGY
ISSN0957-4484
Volume33Issue:34Pages:7
AbstractThe metal/germanium (Ge) photodetectors have attracted much attention for their potential applications in on-chip optoelectronics. One critical issue is the relatively large dark current due to the limited Schottky potential barrier height of the metal/germanium junction, which is mainly caused by the small bandgap of Ge and the Fermi energy level pinning effect between the metal and Ge. The main technique to solve this problem is to insert a thin interlayer between the metal and Ge. However, so far, the dark current of the photodetectors is still large when using a bulk-material insertion layer, while when using a two-dimensional insertion layer, the area of the insertion layer is too small to support a mass production. Here, we report a gold/graphene/germanium photodetector with a wafer-scale graphene insertion layer using a 4 inch graphene-on-germanium wafer. The insertion layer significantly increases the potential barrier height, leading to a dark current as low as 1.6 mA cm(-2), and a responsivity of 1.82 A W-1 which are the best results for metal/Ge photodetectors reported so far. Our work contributes to the mass production of high-performance metal/Ge photodetectors.
Keywordgraphene germanium 2D material Fermi-level pinning photodetector
Funding OrganizationNational Natural Science Foundation of China ; Chinese Academy of Sciences (SYNL Young Talent Project) ; Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; National Key Research and Development Program of China ; Shandong Natural Science Foundation of China
DOI10.1088/1361-6528/ac6ff0
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[62125406] ; Chinese Academy of Sciences (SYNL Young Talent Project)[SKLA-2019-03] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; National Key Research and Development Program of China[2021YFA1200013] ; Shandong Natural Science Foundation of China[ZR2019ZD49]
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000807167200001
PublisherIOP Publishing Ltd
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/174258
Collection中国科学院金属研究所
Corresponding AuthorXue, Zhongying; Sun, Dongming; Liu, Chi
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
Recommended Citation
GB/T 7714
Jiang, Haiyan,Li, Bo,Wei, Yuning,et al. High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer[J]. NANOTECHNOLOGY,2022,33(34):7.
APA Jiang, Haiyan.,Li, Bo.,Wei, Yuning.,Feng, Shun.,Di, Zengfeng.,...&Liu, Chi.(2022).High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer.NANOTECHNOLOGY,33(34),7.
MLA Jiang, Haiyan,et al."High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer".NANOTECHNOLOGY 33.34(2022):7.
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