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Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions
Guo, Xiaokun1,2; Yang, Bing1; Lu, Jiaqi1,2; Li, Haining1,2; Huang, Nan1; Liu, Lusheng1; Jiang, Xin1,3
Corresponding AuthorYang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn)
2022-05-26
Source PublicationJOURNAL OF MATERIALS CHEMISTRY C
ISSN2050-7526
Pages10
AbstractCharge state regulation of color centers in diamond has attracted considerable attention owing to the difference in their optical emission. To date, to convert the neutrally-charged type to the negatively-charged type in diamond has remained a challenge. To address this issue, (100) micro-crystalline diamond membranes containing silicon vacancy (SiV) centers were deposited on n-type silicon substrates, forming diamond/n-Si heterojunctions. Applying a bias voltage on the heterojunctions was carried out to make carriers transport across the diamond/Si interface. Compared with the non-rectifying diamond/n(-)-Si heterojunction, the diamond/n(+)-Si heterojunction shows a rectification ratio of about two orders of magnitude. The SiV- photoluminescence (PL) intensity remains unchanged at the reverse bias in the diamond/n(+)-Si heterojunction, while it increases by two fold at the forward bias, larger than that in the diamond/n(-)-Si heterojunction. Such PL variation is consistent with the injection current in both heterojunctions. Detailed band diagram analysis reveals that electron tunneling from the substrate to the diamond contributes to a larger forward current and brighter SiV- PL emission in the n(+)-Si heterojunction. Therefore, our work demonstrates that the heterojunction of diamond with heavily doped n-type materials would enable the population increase of negatively-charged color centers via the electron tunneling effect.
Funding OrganizationNational Natural Science Foundation of China
DOI10.1039/d2tc01308h
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[52172056] ; National Natural Science Foundation of China[51872294]
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000810165200001
PublisherROYAL SOC CHEMISTRY
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/174300
Collection中国科学院金属研究所
Corresponding AuthorYang, Bing; Jiang, Xin
Affiliation1.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
3.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany
Recommended Citation
GB/T 7714
Guo, Xiaokun,Yang, Bing,Lu, Jiaqi,et al. Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions[J]. JOURNAL OF MATERIALS CHEMISTRY C,2022:10.
APA Guo, Xiaokun.,Yang, Bing.,Lu, Jiaqi.,Li, Haining.,Huang, Nan.,...&Jiang, Xin.(2022).Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions.JOURNAL OF MATERIALS CHEMISTRY C,10.
MLA Guo, Xiaokun,et al."Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions".JOURNAL OF MATERIALS CHEMISTRY C (2022):10.
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