Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor

doi:10.1002/adfm.202204779

IMR OpenIR

	Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor
	Zhang, Tongyao 1,2,3; Zhao, Siwen 4,5; Wang, Anran 1; Xiong, Zhiren 2,3; Liu, Yingjia 4,5; Xi, Ming 6,7; Li, Songlin 1; Lei, Hechang 6,7; Han, Zheng Vitto 2,3; Wang, Fengqiu 1
通讯作者	Zhao, Siwen(swzhao@imr.ac.cn) ; Lei, Hechang(hlei@ruc.edu.cn) ; Han, Zheng Vitto(zhenghan@sxu.edu.cn) ; Wang, Fengqiu(fwang@nju.edu.cn)
	2022-06-11
发表期刊	ADVANCED FUNCTIONAL MATERIALS
ISSN	1616-301X
页码	7
摘要	The emergence of atomically thin valleytronic semiconductors and 2D ferromagnetic materials is opening up new technological avenues for future information storage and processing. A key fundamental challenge is to identify physical knobs that may effectively manipulate the spin-valley polarization, preferably in the device context. Here, a novel spin functional device that exhibits both electrical and magnetic tunability is fabricated, by contacting a monolayer MoSe2 with a 2D ferromagnetic semiconductor Cr2Ge2Te6. Remarkably, the valley-polarization of MoSe2 is found to be controlled by a back-gate voltage with an appreciably enlarged valley splitting rate. At fixed gate voltages, the valley-polarization exhibits magnetic-field and temperature dependence that corroborates well with the intrinsic magnetic properties of Cr2Ge2Te6, pointing to the impact of magnetic exchange interactions. Due to the interfacial arrangement, the charge-carrying trion photoemission predominates in the devices, which may be exploited to enable drift-based spin-optoelectronic devices. These results provide new insights into valley-polarization manipulation in transition metal dichalcogenides by means of ferromagnetic semiconductor proximitizing and represent an important step forward in devising field-controlled 2D magneto-optoelectronic devices.
关键词	heterostructures transition metal dichalcogenides two-dimensional ferromagnetic semiconductors valley polarization
资助者	National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; China Postdoctoral Science Foundation ; Ministry of Science and Technology of China ; Beijing Natural Science Foundation
DOI	10.1002/adfm.202204779
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2017YFA0206304] ; National Key R&D Program of China[2018YFB2200500] ; National Key R&D Program of China[2019YFA0307800] ; National Natural Science Foundation of China (NSFC)[12004259] ; National Natural Science Foundation of China (NSFC)[12104462] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; China Postdoctoral Science Foundation[2019M663046] ; Ministry of Science and Technology of China[2018YFE0202600] ; Beijing Natural Science Foundation[Z200005]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000809382400001
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：18[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/174306
专题	中国科学院金属研究所
通讯作者	Zhao, Siwen; Lei, Hechang; Han, Zheng Vitto; Wang, Fengqiu
作者单位	1.Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China 2.Shanxi Univ, State Key Lab Quantum Opt & Quantum Opt Devices, Inst Optoelect, Taiyuan 030006, Peoples R China 3.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 5.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 6.Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China 7.Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Tongyao,Zhao, Siwen,Wang, Anran,et al. Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor[J]. ADVANCED FUNCTIONAL MATERIALS,2022:7.
APA	Zhang, Tongyao.,Zhao, Siwen.,Wang, Anran.,Xiong, Zhiren.,Liu, Yingjia.,...&Wang, Fengqiu.(2022).Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor.ADVANCED FUNCTIONAL MATERIALS,7.
MLA	Zhang, Tongyao,et al."Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor".ADVANCED FUNCTIONAL MATERIALS (2022):7.